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首页> 外文期刊>Materials science in semiconductor processing >Electrical characterization of defects introduced during electron beam deposition of W Schottky contacts on n-type 4H-SiC
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Electrical characterization of defects introduced during electron beam deposition of W Schottky contacts on n-type 4H-SiC

机译：在n型4H-SiC上W肖特基触点的电子束沉积过程中引入的缺陷的电特性

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摘要

We have studied the defects introduced in n-type 4H-SiC during electron beam deposition (EBD) of tungsten by deep-level transient spectroscopy (DLTS). The results from current-voltage and capacitance voltage measurements showed deviations from ideality due to damage, but were still well suited to a DLTS study. We compared the electrical properties of six electrically active defects observed in EBD Schottky barrier diodes with those introduced in resistively evaporated material on the same material,,as-grown, as well as after high energy electron irradiation (HEEL). We observed that EBD introduced two electrically active defects with energies E-c - 0.42 and E-c - 0.70 eV in the 4H-SiC at and near the interface with the tungsten. The defects introduced by EBD had properties similar to defect attributed to the silicon or carbon vacancy, introduced during HEEI of 4H-SiC. EBD was also responsible for the increase in concentration of a defect attributed to nitrogen impurities (E-c - 0.10) as well as a defect linked to the carbon vacancy (E-c - 0.67). Annealing at 400 degrees C in Ar ambient removed these two defects introduced during the EBD. (C) 2016 Elsevier Ltd. All rights reserved.
机译：我们已经通过深层瞬态光谱法（DLTS）研究了钨在电子束沉积（EBD）期间在n型4H-SiC中引入的缺陷。电流-电压和电容电压测量的结果显示由于损坏而偏离理想状态，但仍非常适合DLTS研究。我们将在EBD肖特基势垒二极管中观察到的六个电活性缺陷的电性能与在同一材料上生长的电阻蒸发材料以及高能电子辐照（HEEL）后引入的那些电性能进行了比较。我们观察到EBD在4W-SiC中以及与钨的界面附近引入了两个电活性缺陷，其能量为E-c-0.42和E-c-0.70 eV。由EBD引入的缺陷具有与归因于4H-SiC HEEI期间引入的硅或碳空位的缺陷相似的性质。 EBD也是造成氮杂质缺陷浓度（E-c-0.10）以及与碳空位有关的缺陷浓度（E-c-0.67）升高的原因。在Ar气氛中在400摄氏度下进行退火可以消除在EBD期间引入的这两个缺陷。 （C）2016 Elsevier Ltd.保留所有权利。

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