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首页> 外文期刊>Metals and Materials International >RF Magnetron Sputtered ITO:Zr Thin Films for the High Efficiency a-Si:H/c-Si Heterojunction Solar Cells
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RF Magnetron Sputtered ITO:Zr Thin Films for the High Efficiency a-Si:H/c-Si Heterojunction Solar Cells

机译：射频磁控溅射ITO：Zr薄膜，用于高效a-Si：H / c-Si异质结太阳能电池

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摘要

ITO and ITO:Zr films with various thicknesses were prepared on glass substrates by RF magnetron sputtering. We observed a decrease in sheet resistance with increasing film thickness that in good agreement with Fuchs-Sondheimer theory. The ITO films doped with ZrO_2 (～0.2 wt%) showed improvement in some of the electrical and optical properties of ITO films. The surface roughness of ITO:Zr films increased with increasing film thickness. ITO:Zr films with thickness of 120 nm showed highest work function of 5.13 eV, as estimated from XPS data. The ITO:Zr films were employed as front electrodes in HIT solar cells; the best device performance was found to be: V_(oc) = 710 mV, J_(sc) = 34.44 mA/cm~2, FF = 74.8%, η = 18.30% at a thickness of 120 nm. A maximum quantum efficiency (QE) of 89% was recorded for HIT solar cells at a wavelength of 700 nm for 120 nm thick ITO:Zr films.
机译：通过射频磁控溅射在玻璃基板上制备了各种厚度的ITO和ITO：Zr膜。我们观察到薄膜电阻随薄膜厚度的增加而降低，这与Fuchs-Sondheimer理论完全吻合。掺杂有ZrO_2（〜0.2 wt％）的ITO薄膜在ITO薄膜的一些电学和光学性能方面有所改善。 ITO：Zr膜的表面粗糙度随膜厚的增加而增加。根据XPS数据估算，厚度为120 nm的ITO：Zr膜的最高功函数为5.13 eV。 ITO：Zr薄膜被用作HIT太阳能电池的前电极;发现最佳的器件性能是：在120nm的厚度下，V_（oc）＝ 710mV，J_（sc）＝ 34.44mA / cm〜2，FF ＝ 74.8％，η＝ 18.30％。对于120 nm厚的ITO：Zr膜，在700 nm的波长下，HIT太阳能电池的最大量子效率（QE）记录为89％。

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