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首页> 外文期刊>Microwave and optical technology letters >INVESTIGATION OF THE ON-CHIP MISM INTERCONNECTS WITH THE ALTERNATING-DIRECTION-IMPLICIT FINITE-DIFFERENCE TIME-DOMAIN METHOD
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INVESTIGATION OF THE ON-CHIP MISM INTERCONNECTS WITH THE ALTERNATING-DIRECTION-IMPLICIT FINITE-DIFFERENCE TIME-DOMAIN METHOD

机译:片上Mism与交替方向隐式有限差分时域方法互连的研究

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摘要

The alternating-direction-implicit finite-difference time-domain method is used to analyze the Metal-Insulator-Semiconductor-Metal interconnects by solving Maxwell's equations in the time domain. The dielectric quasi-TEM mode, the slow wave mode, and the skin-effect mode are all analyzed. This analysis shows that the silicon substrate losses and the metal line losses can be modeled with high resolution. The analysis provides attenuation and phase constant values versus semiconductor doping and frequency. We find that semiconductors readily operate in the slow wave mode and skin effect mode for selected doping densities. Accurate prediction of interconnect losses is critical to high-frequency design with highly constrained timing requirements.
机译:通过在时域中求解麦克斯韦方程,使用交替方向隐式有限差分时域方法来分析金属-绝缘体-半导体-金属互连。分析了介电准TEM模式,慢波模式和趋肤效应模式。该分析表明,可以以高分辨率对硅衬底损耗和金属线损耗进行建模。该分析提供了衰减和相位常数值与半导体掺杂和频率的关系。我们发现,对于选定的掺杂密度,半导体很容易在慢波模式和集肤效应模式下工作。互连损耗的准确预测对于具有严格时序要求的高频设计至关重要。

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