AN IMPROVED SUBSTRATE-LOSS MODEL TO DETERMINE MOSFET DRAIN, SOURCE AND SUBSTRATE ELEMENTS

Reydezel Torres-Torres; Roberto Murphy-Arteaga; Alfonso Torres-Jacome

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AN IMPROVED SUBSTRATE-LOSS MODEL TO DETERMINE MOSFET DRAIN, SOURCE AND SUBSTRATE ELEMENTS

机译：用于确定MOSFET漏极，源极和衬底元素的改进的衬底损耗模型

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An improved model to account for the substrate-loss effects in RF-MOSFETs, which includes its associated parameter extraction, is presented in this paper. This model considers the source-to-bulk capacitance, which allows the proper modeling of MOSFETs output admittance at high frequencies, thus obtaining an excellent agreement between simulated and experimental data up to 21 GHz The proposed model also allows the determination of the source and drain resistances at a given gate bias, independent of frequency.

机译：本文提出了一种改进的模型来解决RF-MOSFET中的衬底损耗效应，包括相关的参数提取。该模型考虑了源到体电容，从而可以对MOSFET的高频输出导纳进行正确建模，从而在高达21 GHz的仿真数据和实验数据之间取得了很好的一致性。该模型还可以确定源极和漏极给定栅极偏置下的电阻，与频率无关。

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来源
《Microwave and optical technology letters》 |2004年第2期|共5页
作者
Reydezel Torres-Torres; Roberto Murphy-Arteaga; Alfonso Torres-Jacome;
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原文格式 PDF
正文语种 eng
中图分类光学;
关键词
RF-CMOS; Substrate losses; Semiconductor device modeling; Microwave measurements;

机译：RF-CMOS;基板损耗;半导体器件建模;微波测量;

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专利

1. AN IMPROVED SUBSTRATE-LOSS MODEL TO DETERMINE MOSFET DRAIN, SOURCE AND SUBSTRATE ELEMENTS [J] . Reydezel Torres-Torres, Roberto Murphy-Arteaga, Alfonso Torres-Jacome Microwave and optical technology letters . 2004,第2期

机译：用于确定MOSFET漏极，源极和衬底元素的改进的衬底损耗模型
2. An improved deep submicrometer MOSFET RF nonlinear model with new breakdown current model and drain-to-substrate nonlinear coupling [J] . Deukhyoun Heo, Gebara E. IEEE Transactions on Microwave Theory and Techniques . 2000,第12期

机译：具有新的击穿电流模型和漏-衬底非线性耦合的改进型深亚微米MOSFET RF非线性模型
3. A new analytical model to determine the drain-source series resistance of FOLD MOSFET [J] . A Kumar, E Kalra, S Haldar Semiconductor Science and Technology . 1999,第6期

机译：确定FOLD MOSFET漏源串联电阻的新分析模型
4. Two-Dimensional MOSFET Dopant Profile by Inverse Modeling via Source/Drain-to-Substrate Capacitance Measurement [C] . R Ghodsi, Y.T. Yeow, C.Y.T. Chiang International Conference on Modeling and Simulation of Microsystems . 2000

机译：通过源/漏极 - 基板电容测量反转建模二维MOSFET掺杂谱
5. Gate Last Indium-Gallium-Arsenide MOSFETs with Regrown Source-Drain Regions and ALD Dielectrics. [D] . Carter, Andrew Daniel. 2013

机译：具有再生源极-漏极区和ALD介电层的最后栅极铟镓砷MOSFET。
6. Anthropogenic Resource Subsidies Determine Space Use by Australian Arid Zone Dingoes: An Improved Resource Selection Modelling Approach [O] . Thomas M. Newsome, Guy-Anthony Ballard, Christopher R. Dickman, -1

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7. Modeling and simulation of subthreshold characteristics of fully-depleted recessed-source/drain UTB SOI MOSFETs including substrate induced surface potential effects [O] . Kumar Ajit 2014

机译：完全耗尽的源极/漏极UTB SOI MOSFET亚阈值特性的建模和仿真，包括衬底引起的表面电势效应

AN IMPROVED SUBSTRATE-LOSS MODEL TO DETERMINE MOSFET DRAIN, SOURCE AND SUBSTRATE ELEMENTS

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