Chemical modification of gate dielectric surfaces in organic thin film transistior (OTFT) Through molecular self-assembly

Jaemin Lee; Hong-Ku Shim; Jeong-Ik Lee; Yong Suk Yang; Seong Hyn Kim; Hye Yong Chu; Lee-Mi Do; Taehyoung Zyung

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Chemical modification of gate dielectric surfaces in organic thin film transistior (OTFT) Through molecular self-assembly

机译：通过分子自组装对有机薄膜晶体管（OTFT）中的栅极介电表面进行化学修饰

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To modify SiO_2 dielectric surface of bottom-contact OTFT device, octadecyltriethoxysilane (OTES) was used to find optimum condition of surface modification for triethoxysilane derivatives. Either spin-coating method or solution dipping method was applied to modify the dielectric surface with OTES. Optimization process was performed with varying solution concentration, reaction time and so on. Through surface modification of OTFT, 0.01-0.04 cm~2/V/s of hole mobilities were observed depending on modification conditions.

机译：为了修饰底部接触OTFT器件的SiO_2介电表面，使用十八烷基三乙氧基硅烷（OTES）寻找三乙氧基硅烷衍生物的表面修饰的最佳条件。采用旋涂法或溶液浸渍法，用OTES改性介电表面。在改变溶液浓度，反应时间等条件下进行了优化过程。通过OTFT的表面改性，根据改性条件观察到0.01-0.04cm〜2 / V / s的空穴迁移率。

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《Molecular crystals and liquid crystals》 |2003年第0期|共8页
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Jaemin Lee; Hong-Ku Shim; Jeong-Ik Lee; Yong Suk Yang; Seong Hyn Kim; Hye Yong Chu; Lee-Mi Do; Taehyoung Zyung;
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中图分类晶体学;
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1. Chemical modification of gate dielectric surfaces in organic thin film transistior (OTFT) Through molecular self-assembly [J] . Jaemin Lee, Hong-Ku Shim, Jeong-Ik Lee, Molecular crystals and liquid crystals . 2003,第0期

机译：通过分子自组装对有机薄膜晶体管（OTFT）中的栅极介电表面进行化学修饰
2. Low-k polymer gate dielectric selection for organic thin-film transistors (OTFTs) using material selection methodologies [J] . Teja Karri Babu Ravi, Gupta Navneet Journal of Computational Electronics . 2019,第3期

机译：使用材料选择方法为有机薄膜晶体管（OTFT）选择低k聚合物栅极电介质
3. Low-k polymer gate dielectric selection for organic thin-film transistors (OTFTs) using material selection methodologies [J] . Teja Karri Babu Ravi, Gupta Navneet Journal of Computational Electronics . 2019,第3期

机译：使用材料选择方法的有机薄膜晶体管（OTFTS）的低k聚合物栅极介质选择
4. Improved Air-stability of n-Channel Organic Thin Film Transistors via Surface Modification on Gate Dielectrics [C] . F. C. Chen, C. H. Liao, W. P. Huang, Thin Film Transistors 9 (TFT 9) . 2008

机译：通过栅极电介质的表面改性改善了n沟道有机薄膜晶体管的空气稳定性
5. Surface modification for thin film deposition, nanocable fabrication and molecular gates in nanoporous templates. [D] . Ku, Jie-Ren. 2005

机译：用于薄膜沉积，纳米电缆制造和纳米孔模板中的分子门的表面改性。
6. Enhanced Dielectric Environment Sensitivity of Surface Plasmon-Polariton in the Surface-Barrier Heterostructures Based on Corrugated Thin Metal Films with Quasi-Anticorrelated Interfaces [O] . Alexander V. Korovin, Nicolas L. Dmitruk, Sergii V. Mamykin, 2017

机译：基于具有拟反相关界面的波纹金属薄膜的表面势垒异质结构中表面等离子-极化子的介电环境敏感性增强
7. Interface Treatment Effect of High Performance Flexible Organic Thin Film Transistor (OTFT) Using PVP Gate Dielectric in Low Temperature [O] . Ho-Jin Yun, Kyu-Ha Baek, Hong-Sik Shin, 2011

机译：低温PVP栅极电介质高性能柔性有机薄膜晶体管（OTFT）的界面处理效果
8. Integration of Peptides into Organic Thin Film Transistor (OTFT)-based Printable Sensors. [R] . Dastoor, P., Belcher, W. J., Zhou, X. 2017

机译：将肽整合到基于有机薄膜晶体管（OTFT）的可印刷传感器中。

Chemical modification of gate dielectric surfaces in organic thin film transistior (OTFT) Through molecular self-assembly

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