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首页> 外文期刊>Nano letters >Phonon Engineering in Isotopically Disordered Silicon Nanowires
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Phonon Engineering in Isotopically Disordered Silicon Nanowires

机译：同位素无序硅纳米线中的声子工程

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The introduction of stable isotopes in the fabrication of semiconductor nanowires provides an additional degree of freedom to manipulate their basic properties, design an entirely new class of devices, and highlight subtle but important nanoscale and quantum phenomena. With this perspective, we report on phonon engineering in metal-catalyzed silicon nanowires with tailor-made isotopic compositions grown using isotopically enriched silane precursors (SiH4)-Si-28, (SiH4)-Si-29, and (SiH4)-Si-30 with purity better than 99.9%. More specifically, isotopically mixed nanowires (SixSi1-x)-Si-28-Si-30 with a composition close to the highest mass disorder (x similar to 0.5) were investigated. The effect of mass disorder on the phonon behavior was elucidated and compared to that in isotopically pure Si-29 nanowires having a similar reduced mass. We found that the disorder-induced enhancement in phonon scattering in isotopically mixed nanowires is unexpectedly much more significant than in bulk crystals of close isotopic compositions. This effect is explained by a nonuniform distribution of Si-28 and Si-30 isotopes in the grown isotopically mixed nanowires with local compositions ranging from x = similar to 0.25 to 0.70. Moreover, we also observed that upon heating, phonons in (SixSi1-x)-Si-28-Si-30 nanowires behave remarkably differently from those in Si-29 nanowires suggesting a reduced thermal conductivity induced by mass disorder. Using Raman nanothermometry, we found that the thermal conductivity of isotopically mixed (SixSi1-x)-Si-28-Si-30 nanowires is similar to 30% lower than that of isotopically pure Si-29 nanowires in agreement with theoretical predictions.
机译：在半导体纳米线的制造中引入稳定同位素提供了额外的自由度，可操纵其基本特性，设计全新的设备类别并突出微妙但重要的纳米级和量子现象。从这个角度出发，我们报告了金属催化的硅纳米线中的声子工程学，该金属纳米线具有使用同位素富集的硅烷前体（SiH4）-Si-28，（SiH4）-Si-29和（SiH4）-Si- 30纯度优于99.9％。更具体地，研究了具有接近最高质量紊乱（x类似于0.5）的组成的同位素混合纳米线（SixSi1-x）-Si-28-Si-30。阐明了质量无序对声子行为的影响，并将其与具有类似减小质量的同位素纯Si-29纳米线进行了比较。我们发现，在同位素混合的纳米线中，由声子散射引起的无序诱导增强比在紧密同位素组成的块状晶体中出乎意料地重要得多。 Si-28和Si-30同位素在生长的同位素混合纳米线中的不均匀分布可以解释这种效应，其局部组成范围为x =类似于0.25至0.70。此外，我们还观察到，加热时，（SixSi1-x）-Si-28-Si-30纳米线中的声子的行为与Si-29纳米线中的声子的行为显着不同，表明由质量无序引起的热导率降低。使用拉曼纳米测温法，我们发现同位素混合（SixSi1-x）-Si-28-Si-30纳米线的热导率比同位素纯Si-29纳米线的热导率低约30％，这与理论预测相符。

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