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Use of negative capacitance to provide voltage amplification for low power nanoscale devices

机译：使用负电容为低功率纳米级器件提供电压放大

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摘要

It is well-known that conventional field effect transistors (FETs) require a change in the channel potential of at least 60 mV at 300 K to effect a change in the current by a factor of 10, and this minimum subthreshold slope S puts a fundamental lower limit on the operating voltage and hence the power dissipation in standard FET-based switches. Here, we suggest that by replacing the standard insulator with a ferroelectric insulator of the right thickness it should be possible to implement a step-up voltage transformer that will amplify the gate voltage thus leading to values of S lower than 60 mV/decade and enabling low voltage/low power operation. The voltage transformer action can be understood intuitively as the result of an effective negative capacitance provided by the ferroelectric capacitor that arises from an internal positive feedback that in principle could be obtained from other microscopic mechanisms as well. Unlike other proposals to reduce S, this involves no change in the basic physics of the FET and thus does not affect its current drive or impose other restrictions.
机译：众所周知，传统的场效应晶体管（FET）需要在300 K时至少改变60 mV的沟道电势，以使电流变化10倍，而该最小亚阈值斜率S使得较低的工作电压限制，从而降低了基于FET的标准开关的功耗。在这里，我们建议通过用适当厚度的铁电绝缘体代替标准绝缘体，应该有可能实现升压变压器，该变压器将放大栅极电压，从而使S值低于60 mV /十倍，并实现低电压/低功率操作。可以将变压器的作用直观地理解为铁电电容器提供的有效负电容的结果，该负电容源于内部正反馈，该正反馈原则上也可以从其他微观机制获得。与其他降低S的提议不同，这不涉及FET的基本物理原理的变化，因此不影响FET的电流驱动或施加其他限制。

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