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Excitation of local field enhancement on silicon nanowires

机译:激发硅纳米线上的局部场

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The interaction between light and reduced-dimensionality silicon attracts significant interest due to the possibilities of designing nanoscaled optical devices, highly cost-efficient solar cells, and ultracompact optoelectronic systems that are integrated with standard microelectronic technology. We demonstrate that Si nanowires (SiNWs) possessing metal-nanocluster coatings support a multiplicatively enhanced near-field light-matter interaction. Raman scattering from chemisorbed probing molecules provides a quantitative measure of the strength of this enhanced coupling. An enhancement factor of 2 orders of magnitude larger than that for the surface plasmon resonance alone (without the SiNWs) along with the attractive properties of SiNWs, including synthetic controllability of shape, indicates that these nanostructures may be an attractive and versatile material platform for the design of nanoscaled optical and optoelectronic circuits.
机译:由于可以设计纳米级光学器件,具有高成本效益的太阳能电池以及与标准微电子技术集成在一起的超紧凑型光电系统,因此光与降维硅之间的相互作用引起了极大的兴趣。我们证明拥有金属纳米簇涂层的硅纳米线(SiNWs)支持倍增增强的近场光物质相互作用。化学吸附探针分子的拉曼散射提供了增强耦合强度的定量方法。与仅表面等离子共振(没有SiNWs)的增强因子相比,SiNWs的增强因子要大2个数量级,同时还具有SiNWs的吸引人的特性,包括形状的可控制性,表明这些纳米结构可能是吸引人的,用途广泛的材料平台。纳米级光学和光电电路的设计。

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