The structural properties of GaN insertions in GaN/A1N nanocolumn heterostructures

C Bougerol; R Songmuang; D Camacho; Y M Niquet; R Mata; A Cros; B Daudin

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The structural properties of GaN insertions in GaN/A1N nanocolumn heterostructures

机译：GaN / AlN纳米柱异质结构中GaN插入物的结构特性

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The strain state of 1 and 2.5 nm thick GaN insertions in GaN/AIN nanocolumn heterostructures has been studied by means of a combination of high resolution transmission electron microscopy, Raman spectroscopy and theoretical modeling. It is found that 2.5 nm thick GaN insertions are partially relaxed, which has been attributed to the presence of dislocations in the external AIN capping layer, in close relationship with the morphology of GaN insertions and with the A1N capping mechanism. The observed plastic relaxation in A1N is consistent with the small critical thickness expected for GaN/A1N radial heterostructures.

机译：通过结合高分辨率透射电子显微镜，拉曼光谱和理论建模，研究了GaN / AIN纳米柱异质结构中1和2.5 nm厚GaN插入层的应变状态。发现2.5 nm厚的GaN插入被部分松弛，这归因于外部AIN覆盖层中存在位错，这与GaN插入的形态以及AlN覆盖机制密切相关。在AlN中观察到的塑性弛豫与GaN / AlN径向异质结构所期望的小临界厚度一致。

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《Nanotechnology》 |2009年第29期|共5页
作者
C Bougerol; R Songmuang; D Camacho; Y M Niquet; R Mata; A Cros; B Daudin;
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正文语种 eng
中图分类 710C0161;
关键词
structural properties; GaN; heterostructures;

机译：结构性质GaN异质结构;

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1. The structural properties of GaN insertions in GaN/A1N nanocolumn heterostructures [J] . C Bougerol, R Songmuang, D Camacho, Nanotechnology . 2009,第29期

机译：GaN / AlN纳米柱异质结构中GaN插入物的结构特性
2. Dependence of Electrical Properties of InAlN/GaN and InAlN/AlGaN/GaN Heterostructures FETs on the A1N Interlayer Thickness [J] . Masanobu HIROKI, Narihiko MAEDA, Naoteru SHIGEKAWA IEICE Transactions on Electronics . 2010,第5期

机译：InAlN / GaN和InAlN / AlGaN / GaN异质结FET的电学特性对AlN层间厚度的依赖性
3. The structural properties of GaN/AlN core-shell nanocolumn heterostructures [J] . Hestroffer K., Mata R., Camacho D., Nanotechnology . 2010,第41期

机译：GaN / AlN核壳纳米柱异质结构的结构性质
4. Luminescence characterization of InGaN/GaN vertical heterostructures grown on GaN nanocolumns [C] . Robert Armitage Symposium LL on Nanowires-Synthesis, Properties, Assembly and Applications . 2009

机译：GaN纳米柱种植的Ingan / GaN垂直异质结构的发光特征
5. A first-principles study of structural, electronic and optical properties of GaN, ZnO and (GaN)1--x(ZnO) x. [D] . Liu, Jian. 2015

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6. New 2D Structural Materials: Carbon–GalliumNitride (CC–GaN) and Boron–Gallium Nitride (BN–GaN)Heterostructures—Materials Design Through Density FunctionalTheory [O] . Van W. Elloh, Abu Yaya, G. Gebreyesus, 2019

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7. Influence of GaN column diameter on structural properties for InGaN nanocolumns grown on top of GaN nanocolumns [O] . Takao Oto, Yutaro Mizuno, Ai Yanagihara, 2016

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The structural properties of GaN insertions in GaN/A1N nanocolumn heterostructures

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