Two-bit ferroelectric field-effect transistor memories assembled on individual nanotubes

WY Fu; Z Xu; L Liu; X D Bai; E GWang

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Two-bit ferroelectric field-effect transistor memories assembled on individual nanotubes

机译：组装在单个纳米管上的两位铁电场效应晶体管存储器

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Carbon nanotube (CNT) ferroelectric field-effect transistors (FeFETs) with well-definedmemory switch behaviors are promising for nonvolatile, nondestructive read-out (NDRO) memory operation and ultralow power consumption. Here, we report two-bit CNT-FeFET memories by assembling two top gates on individual nanotubes coated with ferroelectric thin films. Each bit of the nanotube transistor memory exhibits a controllable memory switching behavior induced by the reversible remnant polarization of the ferroelectric films, and its NDRO operation is demonstrated. The low driving voltage of 2 V, high carrier mobility over 1000 cm2 V-1 s-1, and potential ultrahigh integration density over 200 Gbit inch-2 of the two-bit FeFET memory are highlighted in this paper.

机译：具有明确定义的存储器开关特性的碳纳米管（CNT）铁电场效应晶体管（FeFET）对于非易失性，非破坏性读出（NDRO）存储器操作和超低功耗具有广阔的前景。在这里，我们通过在涂有铁电薄膜的单个纳米管上组装两个顶栅来报告两位CNT-FeFET存储器。纳米管晶体管存储器的每一位都表现出由铁电薄膜的可逆残余极化引起的可控的存储器开关行为，并对其NDRO操作进行了演示。本文重点介绍了2位FeFET存储器的2 V低驱动电压，超过1000 cm2 V-1 s-1的高载流子迁移率以及超过200 Gbit inch-2的潜在超高集成密度。

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《Nanotechnology》 |2009年第47期|共5页
作者
WY Fu; Z Xu; L Liu; X D Bai; E GWang;
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正文语种 eng
中图分类特种结构材料;
关键词
transistor; individual; individual;

机译：晶体管;个体;个体;

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专利

1. Two-bit ferroelectric field-effect transistor memories assembled on individual nanotubes [J] . WY Fu, Z Xu, L Liu, Nanotechnology . 2009,第47期

机译：组装在单个纳米管上的两位铁电场效应晶体管存储器
2. Operation of Ferroelectric Gate Field-Effect Transistor Memory with Intermediate Electrode using Polycrystalline Capacitor and Metal-Oxide-Semiconductor Field-Effect Transistor [J] . Bui Nguyen Quoc Trinh, Susumu Horita Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2006,第9B期

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3. Device modeling of ferroelectric memory field-effect transistor for the application of ferroelectric random access memory [J] . Hang-Ting Lue, Chien-Jang Wu, Tseung-Yuen Tseng IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control . 2003,第1期

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4. Fabrication of Pt/Sr{sub}2(Ta{sub}(1-x), Nb{sub}x){sub}2O{sub}7/SiO{sub}2/Si Field-Effect Transistor for One-Transistor-Type Ferroelectric Random Access Memory [C] . ICHIROU TAKAHASHI, KEITA AZUMI, YASUYUKI SHIRAI, WSEAS Internatinal Conference on Microelectronics, Nanoelectronics, Optoelectronics . 2007

机译：Pt / Sr {sub} 2的制造（ta {sub}（1-x），nb {sub} x）{sub} 2o {sub} 7 / si {sub} 2 / si场效应晶体管用于单晶体电机-Type铁电随机存取存储器
5. Nano-assembled carbon nanotube thin film based microstructures, field-effect transistors, and acetylcholine biosensors. [D] . Xue, Wei. 2007

机译：基于纳米组装的碳纳米管薄膜的微结构，场效应晶体管和乙酰胆碱生物传感器。
6. Single-Walled Carbon Nanotube Dominated Micron-Wide Stripe Patterned-Based Ferroelectric Field-Effect Transistors with HfO2 Defect Control Layer [O] . Qiuhong Tan, Qianjin Wang, Yingkai Liu, 2018

机译：具有HfO2缺陷控制层的单壁碳纳米管为主的微米级条纹图案化铁电场效应晶体管
7. Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors [O] . Thomas Mikolajick, Stefan Slesazeck, Min Hyuk Park, 2018

机译：铁电动随机存档回忆和铁电场效应晶体管的铁电铪氧化物

Two-bit ferroelectric field-effect transistor memories assembled on individual nanotubes

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