Atomic contact potential variations of Si(111)-7 × 7 analyzed by Kelvin probe force microscopy

Kawai S.; Glatzel T.; Hug H.-J.; Meyer E.

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Atomic contact potential variations of Si(111)-7 × 7 analyzed by Kelvin probe force microscopy

机译：用开尔文探针力显微镜分析Si（111）-7×7的原子接触电势变化

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We studied atomic contact potential variations of Si(111)-7 × 7 by Kelvin probe force microscopy with the amplitude modulation technique at the second resonance of a silicon cantilever. Enhanced sensitivity due to the high mechanical quality factor in ultra-high vacuum enabled local contact potential difference (LCPD) measurements of individual adatoms. The contrast of the measured LCPD map became stronger by reducing the tip-sample distance, and the averaged LCPD value shifted to more negative. The short-range interaction, arising from the covalent bonding interactions, strongly affects the LCPD measurement. Theoretical calculations indicate that the amplitude modulation method has a higher sensitivity than the frequency modulation method in practical cases. The tip-sample distance dependence of LCPD was investigated by numerical calculations.

机译：我们用开尔文探针力显微镜通过振幅调制技术在硅悬臂的第二次共振下研究了Si（111）-7×7的原子接触电势变化。超高真空中的高机械品质因数提高了灵敏度，可实现单个吸附原子的局部接触电势差（LCPD）测量。测量的LCPD图的对比度通过减小尖端采样距离而变得更强，并且LCPD的平均值向负值移动。由共价键相互作用引起的短程相互作用强烈影响LCPD的测量。理论计算表明，在实际情况下，调幅方法比调频方法具有更高的灵敏度。通过数值计算研究了LCPD的尖端-样品距离依赖性。

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《Nanotechnology》 |2010年第24期|共9页
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Kawai S.; Glatzel T.; Hug H.-J.; Meyer E.;
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1. Atomic contact potential variations of Si(111)-7 × 7 analyzed by Kelvin probe force microscopy [J] . Kawai S., Glatzel T., Hug H.-J., Nanotechnology . 2010,第24期

机译：用开尔文探针力显微镜分析Si（111）-7×7的原子接触电势变化
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3. On the relevance of the atomic-scale contact potential difference by mplitude-modulation and frequency-modulation Kelvin probe force microscopy [J] . Laurent Nony, Franck Bocquet, Christian Loppacher, Nanotechnology . 2009,第26期

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Atomic contact potential variations of Si(111)-7 × 7 analyzed by Kelvin probe force microscopy

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