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Switching kinetics of a Cu_2S-based gap-type atomic switch

机译：基于Cu_2S的间隙型原子开关的开关动力学

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The switching time of a Cu_2S-based gap-type atomic switch is investigated as a function of temperature, bias voltage, and initial off-resistance. The gap-type atomic switch is realized using a scanning tunneling microscope (STM), in which the formation and annihilation of a Cu-atom bridge in the vacuum gap between the Cu_2S electrode and the Pt tip of the STM are controlled by a solid-electrochemical reaction. Increasing the temperature decreases the switching time exponentially with an activation energy of about 1.38eV. Increasing the bias voltage also shortens the switching time exponentially, exhibiting a greater exponent for the lower bias than for the higher bias. Furthermore, faster switching has been achieved by decreasing the initial off-resistance between the Cu_2S electrode and STM tip. On the basis of these results, we suggest that, in addition to the chemical reaction, the electric field in the vacuum gap plays a significant role in the operation of a gap-type atomic switch. This investigation advances our understanding of the operating mechanism of an atomic switch, which is a new concept for future electronic devices.
机译：研究了基于Cu_2S的间隙型原子开关的开关时间与温度，偏置电压和初始截止电阻的关系。间隙型原子开关是使用扫描隧道显微镜（STM）实现的，其中在Cu_2S电极和STM的Pt尖端之间的真空间隙中，Cu原子桥的形成和hil灭是通过固相控制的。电化学反应。温度升高，激活能量约为1.38eV，则开关时间呈指数下降。增加偏置电压也会成倍地缩短开关时间，与较高的偏置相比，较低的偏置具有更大的指数。此外，通过减小Cu_2S电极和STM电极头之间的初始断开电阻，可以实现更快的切换。根据这些结果，我们建议，除化学反应外，真空间隙中的电场在间隙型原子开关的操作中也起着重要作用。这项研究提高了我们对原子开关操作机制的理解，这是未来电子设备的新概念。

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