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Parallel-local anodic oxidation of silicon surfaces by soft stamps

机译：软压模对硅表面进行平行局部阳极氧化

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We investigate the fabrication of nanometric patterns on silicon surfaces by using the parallel-local anodic oxidation technique with soft stamps. This method yields silicon oxide nanostructures 15 nm high, namely at least five times higher than the nanostructures made with local anodic oxidation using atomic force microscopy, and thanks to the size of the stamp enables one to pattern the surface across a centimetre length scale. To implement this technique, we built a machine to bring the metallized polydimethylsiloxane stamp in contact with the silicon surface, subsequently inserted in a sealed chamber with controlled relative humidity. The oxide nanostructures are fabricated when a bias voltage of 36 V is applied between the stamp and the silicon for 2 min, with a relative humidity of 90%. The flexibility of the stamp enables a homogeneous conformal contact with the silicon surface, resulting in an excellent reproducibility of the process. Moreover, by means of two subsequent oxidations with the same stamp and just rotating the sample, we are able to fabricate complex nanostructures. Finally, a detailed study of the oxidation mechanism, also using a finite element analysis, has been performed to understand the underlying mechanism.
机译：我们研究通过使用带有软压模的平行局部阳极氧化技术在硅表面上制作纳米图案。该方法产生的氧化硅纳米结构高15 nm，即比使用原子力显微镜通过局部阳极氧化制成的纳米结构高至少五倍，而且由于压模的尺寸使人们能够在厘米长的范围内对表面进行图案化。为了实施该技术，我们构建了一种机器，使金属化的聚二甲基硅氧烷印模与硅表面接触，随后将其插入具有相对湿度受控的密封腔中。当在压模和硅之间施加36 V的偏置电压2分钟，相对湿度为90％时，将制造氧化物纳米结构。压模的柔性使得与硅表面的均匀共形接触成为可能，从而实现了出色的工艺重现性。此外，借助具有相同印记的两次后续氧化并仅旋转样品，我们就能制造出复杂的纳米结构。最后，还使用有限元分析对氧化机理进行了详细研究，以了解其潜在机理。

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