• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Microelectronics Technology and Devices-SBMicro 2008 >Local Anodic Oxidation Induced by Electric Fields of MV/cm at AFM Silicon Nitride Tips on Silicon Surfaces
【24h】

Local Anodic Oxidation Induced by Electric Fields of MV/cm at AFM Silicon Nitride Tips on Silicon Surfaces

机译：MV / cm电场在硅表面上的AFM氮化硅尖端引起的局部阳极氧化

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Local anodic oxidation of silicon using Atomic Force Microscopy (AFM) was investigated by applying a negative voltage between a silicon nitride tip and p~+doped Si (111) surfaces. Numerical simulations of the electric field at the silicon nitride tip apex on the silicon presented values next to 1×10~6 V/cm, which is ten times lower than that obtained from conductive tips. In addition, a last ammonium-based cleaning known as standard cleaning 1 (SCI) was a necessary pre-conditioning for anodic oxidation to occur using negative applied potentials (V_(tip)) ranging from -15 to -22.5V. The anodic oxidation was performed from 0 to 144 hours after SC1. Localized squares patterns of oxide, 0.25 μm~2 in area, were formed by growing parallel lines with constant interlinear spacing and length and several scans in the same area. It was noteworthy that oxide thickness increased with the applied negative voltage, number of scans and interval of time after SC1. As a result, the high hydrophilic characteristic of the rnSC1-last cleaning allowed establishing a local oxidation process assisted by lower electric fields (1×10~6 V/cm) and by diffusion of ionic species generated from adsorbed water after SC1.
机译：通过在氮化硅尖端和p〜+掺杂的Si（111）表面之间施加负电压，研究了使用原子力显微镜（AFM）研究硅的局部阳极氧化。硅上氮化硅尖端顶点处的电场的数值模拟显示的值接近1×10〜6 V / cm，这是从导电尖端获得的值的十倍。另外，最后的基于铵的清洗称为标准清洗1（SCI），是使用范围为-15至-22.5V的负施加电势（V_（tip））进行阳极氧化的必要预处理。在SC1之后的0至144小时内进行阳极氧化。通过生长具有恒定线间间距和长度的平行线并在同一区域中进行多次扫描，形成了面积为0.25μm〜2的局部氧化物正方形图案。值得注意的是，氧化物厚度随施加的负电压，扫描次数和SC1之后的时间间隔而增加。结果，rnSC1-最后清洗的高亲水特性允许在较低电场（1×10〜6 V / cm）和SC1之后从吸附水产生的离子种类扩散的帮助下建立局部氧化过程。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号