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Nanoscale electron beam induced etching: a continuum model that correlates the etch profile to the experimental parameters

机译:纳米级电子束诱导蚀刻:将蚀刻轮廓与实验参数相关联的连续模型

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In this paper, we relate experimental electron beam induced etching profiles to various electron limited and mass transport limited regimes via a continuum model. In particular, we develop a series of models with increasing complexity and demonstrate the effects and interactions that the precursor gas adsorption kinetics, the electron flux distribution, and the etch product desorption kinetics have on the resultant nanoscale etching profile. Unlike analogous electron beam induced deposition models, it is shown that one must consider the diffusion, desorption, and possible re-dissociation of the resultant etch product to understand the observed etching profiles. To confirm the explanation of the etch results, a defocus experiment was performed showing transitions from the electron flux limited to the mass transport limited to the etch product dissociation limited regimes.
机译:在本文中,我们通过连续模型将实验电子束诱导的刻蚀轮廓与各种受电子限制和质量传输受限制的状态相关联。特别是,我们开发了一系列复杂程度不断提高的模型,并证明了前驱体气体吸附动力学,电子通量分布和蚀刻产物解吸动力学对所得纳米级蚀刻轮廓的影响和相互作用。与类似的电子束感应沉积模型不同,它表明必须考虑所得蚀刻产品的扩散,解吸和可能的再离解,以了解观察到的蚀刻轮廓。为了证实对蚀刻结果的解释,进行了散焦实验,显示了从受限制的电子通量过渡到受蚀刻产物解离限制的质量输运的过渡。

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