Solution-processed flexible ZnO transparent thin-film transistors with a polymer gate dielectric fabricated by microwave heating

Yang C; Hong K; Jang J; Chung DS; An TK; Choi WS; Park CE

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Solution-processed flexible ZnO transparent thin-film transistors with a polymer gate dielectric fabricated by microwave heating

机译：固溶处理的柔性ZnO透明薄膜晶体管，其具有通过微波加热制成的聚合物栅极电介质

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We report the development of solution-processed zinc oxide (ZnO) transparent thin-film transistors (TFTs) with a poly(2-hydroxyethyl methacrylate) (PHEMA) gate dielectric on a plastic substrate. The ZnO nanorod film active layer, prepared by microwave heating, showed a highly uniform and densely packed array of large crystal size (58 nm) in the [ 002] direction of ZnO nanorods on the plasma-treated PHEMA. The flexible ZnO TFTs with the plasma-treated PHEMA gate dielectric exhibited an electron mobility of 1.1 cm(2) V-1 s(-1), which was higher by a factor of similar to 8.5 than that of ZnO TFTs based on the bare PHEMA gate dielectric.

机译：我们报告了在塑料基板上使用聚甲基丙烯酸2-羟乙酯（PHEMA）栅极电介质的固溶处理氧化锌（ZnO）透明薄膜晶体管（TFT）的发展。通过微波加热制备的ZnO纳米棒膜活性层在经过等离子体处理的PHEMA上显示出高度均匀且密集的阵列，在ZnO纳米棒的[002]方向上具有较大的晶体尺寸（58 nm）。具有等离子体处理过的PHEMA栅极电介质的柔性ZnO TFTs的电子迁移率为1.1 cm（2）V-1 s（-1），比裸露的ZnO TFT的电子迁移率高8.5倍左右。 PHEMA栅极电介质。

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《Nanotechnology》 |2009年第46期|共5页
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Yang C; Hong K; Jang J; Chung DS; An TK; Choi WS; Park CE;
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1. Solution-processed flexible ZnO transparent thin-film transistors with a polymer gate dielectric fabricated by microwave heating [J] . Yang C, Hong K, Jang J, Nanotechnology . 2009,第46期

机译：固溶处理的柔性ZnO透明薄膜晶体管，其具有通过微波加热制成的聚合物栅极电介质
2. Enhanced Performance in Al-Doped ZnO Based Transparent Flexible Transparent Thin-Film Transistors Due to Oxygen Vacancy in ZnO Film with Zn-Al-O Interfaces Fabricated by Atomic Layer Deposition [J] . Li Yang, Yao Rui, Wang Huanhuan, ACS applied materials & interfaces . 2017,第13期

机译：通过由原子层沉积制造的Zn-Al-O界面在ZnO膜中的氧空位，增强了基于ZnO的透明柔性透明薄膜晶体管的性能。用原子层沉积制造的Zn-Al-O界面
3. High-Performance Solution-Processed Zinc–Tin-Oxide Thin-Film Transistors Employing Ferroelectric Copolymers Fabricated at Low Temperature for Transparent Flexible Displays [J] . Tae-Jun Ha IEEE Electron Device Letters . 2016,第12期

机译：高性能溶液处理的锌－锡氧化物薄膜晶体管，采用低温制造的铁电共聚物，用于透明柔性显示器
4. Flexible Oxide Thin-Film Transistors Fabricated at Room Temperature By Introducing Polymer Dielectric and Microwave Annealing [C] . SeongCheol Jang, Jaehyun Kim, Kyung Jin Lee, Pacific Rim Meeting on Electrochemical and Solid-State Science . 2020

机译：通过引入聚合物电介质和微波退火的柔性氧化物薄膜晶体管在室温下制造
5. Understanding the Enhanced Mobility of Solution-Processed Metal-Oxide Thin-Film Transistors Having High-k Gate Dielectrics. [D] . Zeumault, Andre. 2017

机译：了解具有高k栅极介电常数的固溶处理金属氧化物薄膜晶体管的迁移率。
6. Self-Aligned Top-Gate Metal-Oxide Thin-Film Transistors Using a Solution-Processed Polymer Gate Dielectric [O] . Seungbeom Choi, Seungho Song, Taegyu Kim, 2020

机译：使用溶液加工的聚合物栅极电介质自对准顶栅金属氧化物薄膜晶体管
7. Self-Aligned Top-Gate Metal-Oxide Thin-Film Transistors Using a Solution-Processed Polymer Gate Dielectric [O] . Seungbeom Choi, Seungho Song, Taegyu Kim, 2020

机译：使用溶液加工的聚合物栅极电介质自对准顶栅金属氧化物薄膜晶体管

Solution-processed flexible ZnO transparent thin-film transistors with a polymer gate dielectric fabricated by microwave heating

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