MOS photodetectors based on Au-nanorod doped graphene electrodes

Chen Y.-T.; Hsieh Y.-P.; Shih F.-Y.; Chang C.-Y.; Hofmann M.; Chen Y.-F.

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MOS photodetectors based on Au-nanorod doped graphene electrodes

机译：基于金纳米掺杂石墨烯电极的MOS光电探测器

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By using Au-nanorod (Au-NR) doped graphene as a transparent conducting electrode, Si-based metal-oxide-semiconductor (MOS) photodetectors (PDs) exhibit high external quantum efficiency (EQE) and fast response time. It is found that upon adding Au-NRs to the graphene, a significant increase in EQE is observed for both planar and Si-nanotip (Si-NT) MOS PDs. The planar Si-based MOS PDs reveal a notable photoresponse with an EQE of 49% at the peak wavelength of 530nm under zero bias and an EQE of 66% at the peak wavelength of 600nm under - 0.4V bias. For the Si-NTs MOS PD, it exhibits a relatively high EQE of 71% under - 4V bias due to the effect of light trapping arising from the nature of the Si-NT array

机译：通过使用Au-nanorod（Au-NR）掺杂的石墨烯作为透明导电电极，Si基金属氧化物半导体（MOS）光电探测器（PD）表现出高的外部量子效率（EQE）和快速的响应时间。发现在将Au-NRs添加到石墨烯后，对于平面和Si-nanotip（Si-NT）MOS PD均观察到EQE显着增加。平面Si基MOS PD表现出显着的光响应，在零偏压下，在530nm的峰值波长处的EQE为49％，在-0.4V偏压下，在600nm的峰值波长下的EQE为66％。对于Si-NTs MOS PD，由于Si-NT阵列的性质引起的光捕获效应，在-4V偏置下它表现出71％的较高EQE

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《Nanotechnology》 |2011年第30期|共6页
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Chen Y.-T.; Hsieh Y.-P.; Shih F.-Y.; Chang C.-Y.; Hofmann M.; Chen Y.-F.;
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1. MOS photodetectors based on Au-nanorod doped graphene electrodes [J] . Chen Y.-T., Hsieh Y.-P., Shih F.-Y., Nanotechnology . 2011,第30期

机译：基于金纳米掺杂石墨烯电极的MOS光电探测器
2. Fabrication of high-performance flexible photodetectors based on Zn-doped MoS2/graphene hybrid fibers [J] . Kim Seong Jun, Kang Min-A, Jeon In-su, Journal of Materials Chemistry, C. materials for optical and electronic devices . 2017,第47期

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3. Highly Sensitive Flexible Photodetectors Based on Self-Assembled Tin Monosulfide Nanoflakes with Graphene Electrodes [J] . Kumar Ganesan Mohan, Fu Xiao, Ilanchezhiyan Pugazhendi, ACS applied materials & interfaces . 2017,第37期

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4. Improved characteristics of polymer photodetectors using phosphonic acid-based self-assembled monolayer treatment for interfacial-engineering of Ga-doped ZnO electrodes [C] . Hirotake Kajii, Yoshinori Mohri, Hiyuto Okui, International Workshop on Active-Matrix Flatpanel Displays and Devices . 2017

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5. A novel approach for betavoltaic devices utilizing nitrogen doped graphene powder as an electrode. [D] . Drake, Kyle Joseph. 2014

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8. Integrated Graphene-Based Optoelectronic Devices Used for Ultrafast Optical-THz Photodetectors, Modulators and Emitters. [R] . Gumbs, G. 2015

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MOS photodetectors based on Au-nanorod doped graphene electrodes

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