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Tip-sample distance dependency of non-contact atomic force microscopy images on a GaAs(110) surface

机译：GaAs（110）表面上非接触原子力显微镜图像的针尖样本距离依赖性

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摘要

Tip-sample interactions are at the origin of atomic resolution in non-contact atomic force microscopy (NC-AFM) but also make it difficult to understand the meaning of atomic features observed as NC-AFM images. (110) surfaces of III-V semiconductors such as GaAs or InP have relaxed (1 X 1) surfaces with both anions and cations of different dangling bond states. Since these atoms are located at the surface where an atom attached to the tip apex can reach to interact with them and show significant relaxation via tip-sample interaction, NC-AFM images of the surface are expected to strongly depend upon the atomic species or the electronic state of the topmost atom at the tip apex. We have taken a number of NC-AFM images of GaAs(110) surfaces with a Si tip by means of room-temperature ultra-high vacuum NC-AFM and categorized them into two types of image which have different tip-sample distance dependencies. In comparison with a theoretical prediction of tip-surface interaction on the GaAs(110) surface, we have found that one of these images is due to a Si atom attached to the apex which reveals the tip-sample interaction with As and Ga surface atoms as individual peaks in the NC-AFM image.
机译：尖端样品相互作用是非接触原子力显微镜（NC-AFM）中原子分辨率的起源，但也使人们难以理解作为NC-AFM图像观察到的原子特征的含义。诸如GaAs或InP之类的III-V半导体的（110）表面具有松弛的（1 X 1）表面，其阴离子和阳离子都具有不同的悬空键状态。由于这些原子位于附着在尖端顶点的原子可以到达并与它们相互作用并通过尖端-样品相互作用而显示出明显弛豫的表面，因此，预期该表面的NC-AFM图像在很大程度上取决于原子种类或原子。尖端最高原子的电子态。我们已经通过室温超高真空NC-AFM拍摄了许多带有Si尖端的GaAs（110）表面的NC-AFM图像，并将它们分类为两种类型的图像，这些图像具有不同的尖端样品距离相关性。与理论上对GaAs（110）表面上的尖端表面相互作用的预测相比，我们发现这些图像之一是由于附着在顶点上的Si原子揭示了尖端样品与As和Ga表面原子的相互作用作为NC-AFM图像中的各个峰。

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