Light emission induced by tunnelling electrons from a p-type GaAs(110) surface observed at near-field by a conductive optical fibre probe

Daisuke Fujita; Keiko Onishi; Noriko Niori

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Light emission induced by tunnelling electrons from a p-type GaAs(110) surface observed at near-field by a conductive optical fibre probe

机译：导电光纤探针在近场观察到的通过隧穿电子从p型GaAs（110）表面隧穿引起的发光

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An ultrahigh-vacuum low-temperature scanning tunnelling microscope with a near-field optical detection system using conductive and optically transparent probes was used to study tunnelling-electron-induced photon emission from a cleaved p-type GaAs(110) surface. Photons generated in a nanometre-scale area just under the probe were collected within the optical near-field region into the core of the optical fibre tip. We observed a strong photon emission at positive sample biases by injecting electrons into the surface, where radiative recombination of electron-hole pairs is a reasonable explanation for the STM-induced photon emission. A drop in photon intensity at the Zn dopant regions was-observed, which can be explained by the local band potential change around the Zn acceptor atoms located at sub-surface layers.

机译：使用具有导电和光学透明探针的近场光学检测系统的超高真空低温扫描隧道显微镜，研究了劈裂的p型GaAs（110）表面的隧道电子诱导的光子发射。在探头正下方的纳米级区域中产生的光子在光学近场区域内收集到光纤尖端的芯中。我们通过将电子注入表面来观察到正样品偏压下的强光子发射，其中电子-空穴对的辐射复合是STM诱导光子发射的合理解释。观察到Zn掺杂剂区域的光子强度下降，这可以通过位于亚表层的Zn受体原子周围的局部带电势变化来解释。

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《Nanotechnology》 |2004年第6期|共7页
作者
Daisuke Fujita; Keiko Onishi; Noriko Niori;
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1. Light emission induced by tunnelling electrons from a p-type GaAs(110) surface observed at near-field by a conductive optical fibre probe [J] . Daisuke Fujita, Keiko Onishi, Noriko Niori Nanotechnology . 2004,第6期

机译：导电光纤探针在近场观察到的通过隧穿电子从p型GaAs（110）表面隧穿引起的发光
2. Probing nanoscale potential modulation by defect-induced gap states on GaAs(110) with light-modulated scanning tunneling spectroscopy [J] . Shoji Yoshida, Yuya Kanitani, Osamu Takeuchi, Applied Physicsletters . 2008,第10期

机译：利用光调制扫描隧道光谱在GaAs（110）上通过缺陷诱导的间隙态探测纳米级电势调制
3. Atomic resolution in tunneling induced light emission from GaAs(110) [J] . Maria Reinhardt, Guillaume Schul, Philipp Ebert, Applied Physicsletters . 2010,第15期

机译：GaAs（110）隧穿诱导的光发射中的原子分辨率
4. STM Light Emission from p-type GaAs (110) surface [C] . M.Hoshino, N.Yamamoto Materials Research Society Symposium . 2003

机译：P型GaAs（110）表面的STM光发射
5. Terahertz spectroscopy and laser induced infrared emission spectroscopy of nitromethane and optical properties of laser-induced carriers on semiconductor surfaces probed by a 10.6 micron wavelength carbon dioxide laser. [D] . Toyoda, Yoshimasa. 2008

机译：硝基甲烷的太赫兹光谱和激光诱导红外发射光谱，以及用10.6微米波长的二氧化碳激光器探测的半导体表面上激光诱导的载流子的光学特性。
6. Near-Field Spectral Response of Optically ExcitedScanning Tunneling Microscope Junctions Probed by Single-MoleculeAction Spectroscopy [O] . Hannes Böckmann, Melanie Müller, Adnan Hammud, -1

机译：光激发的近场光谱响应单分子探测的扫描隧道显微镜结。动作光谱
7. Probing nanoscale potential modulation by defect-induced gap states on GaAs(110) with light-modulated scanning tunneling spectroscopy [O] . Yoshida Shoji, Kanitani Yuya, Takeuchi Osamu, 2008

机译：利用光调制扫描隧道光谱在GaAs（110）上通过缺陷诱导的间隙态探测纳米级电势调制
8. Tandem Microscopic-Electrochemical Examination of A Charge-Induced Surface Phase Sequence: Ordered Au(110) in Aqueous Iodide Electrolytes as Probed by Potentiodynamic Scanning Tunneling Microscopy. [R] . Gao, X., Edens, G. J., Weaver, M. J. 1994

机译：电荷诱导表面相序列的串联显微电化学检测：碘化物电解质中的有序au（110），通过动电位扫描隧道显微镜探测。

Light emission induced by tunnelling electrons from a p-type GaAs(110) surface observed at near-field by a conductive optical fibre probe

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