We present a full process based on chemical vapour deposition that allows fabrication and integration at the wafer scale of carbon-nanotube-based field effect transistors. We make a statistical analysis of the integration yield that allows assessment of the parameter fluctuations of the titanium-nanotube contact obtained by self-assembly. This procedure is applied to raw devices without post-process. Statistics at the wafer scale reveal the respective role of semiconducting and metallic connected nanotubes and show that connection yields up to 86 percent can be reached. For large scale device integration, our process has to implement both wafer-scale self-assembly of the nanotubes and high transistor performances. In order to address this last issue, a gate engineering process has been investigated. We present the improvements obtained using low and high K dielectrics for the gate oxide.
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