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High aspect ratio silicon nanomoulds for UV embossing fabricated by directional thermal oxidation using an oxidation mask

机译：通过使用氧化掩模的定向热氧化制造的用于UV压印的高纵横比硅纳米模具

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摘要

Nanomoulding is simple and economical but moulds with nanoscale features are usually prohibitively expensive to fabricate because nanolithographic techniques are mostly serial and time-consuming for large-area patterning. This paper describes a novel, simple and inexpensive parallel technique for fabricating nanoscale pattern moulds by silicon etching followed by thermal oxidation. The mask pattern can be made by direct photolithography or photolithography followed by metal overetching for submicron- and nanoscale features, respectively. To successfully make nanoscale channels having a post-oxidation cross-sectional shape similar to that of the original channel, an oxidation mask to promote unidirectional (specifically horizontal) oxide growth is found to be essential. A silicon nitride or metal mask layer prevents vertical oxidation of the Si directly beneath it. Without this mask, rectangular channels become smaller but are V-shaped after oxidation. By controlling the silicon etch depth and oxidation time, moulds with high aspect ratio channels having widths ranging from 500 to 50 nm and smaller can be obtained. The nanomould, when passivated with a Teflon-like layer, can be used for first-generation replication using ultraviolet (UV) nanoembossing and second-generation replication in other materials, such as polydimethylsiloxane (PDMS). The PDMS stamp, which was subsequently coated with Au, was used for transfer printing of Au electrodes with a 600 nm gap which will find applications in plastics nanoelectronics.
机译：纳米模制既简单又经济，但是具有纳米级特征的模具制造成本通常过高，这是因为纳米光刻技术大多是连续的，而且对于大面积构图来说很费时间。本文介绍了一种新颖，简单且便宜的并行技术，该技术通过硅蚀刻和热氧化来制造纳米级图案模具。可以通过直接光刻或光刻，然后分别对亚微米级和纳米级特征进行金属过蚀刻来制成掩模图案。为了成功地制造出具有类似于原始通道的氧化后横截面形状的纳米级通道，发现促进单向（特定水平）氧化物生长的氧化掩模是必不可少的。氮化硅或金属掩模层可防止直接在其下方的Si垂直氧化。没有此掩模，矩形通道会变小，但在氧化后呈V形。通过控制硅的蚀刻深度和氧化时间，可以获得具有宽宽比在500至50 nm或更小的高纵横比通道的模具。当纳米模具被特氟隆样层钝化时，可用于使用紫外线（UV）纳米压印的第一代复制以及在其他材料（例如聚二甲基硅氧烷（PDMS））中的第二代复制。 PDMS印模随后涂有金，用于间隙宽度为600 nm的金电极的转移印刷，这将在塑料纳米电子学中得到应用。

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