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首页> 外文期刊>Nanotechnology >Conduction intersubband transitions at normal incidence in Si1-xGex quantum well devices
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Conduction intersubband transitions at normal incidence in Si1-xGex quantum well devices

机译：Si1-xGex量子阱器件中法向入射时的导带间跃迁

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摘要

We show theoretically that it is possible to design SiGe-based quantum well structures in which conduction intersubband transitions are induced by normal incidence infrared radiation. A sp(3)d(5)s* tight binding model has been adopted to evaluate the electronic states and optical transitions between lowest conduction confined states of a superlattice composed of one pure Ge quantum well separated by SiGe alloys, grown along the [001] direction. We find that significant optical coupling between confined states in the Ge wells is achieved at normal incidence radiation by the off-diagonal elements of the mass tensor. The minimum energy Ge conduction valleys are, in fact, tilted with respect to the [001] growth axis. For comparison we show that no such coupling can be realized for the conduction states confined in a similar structure composed by Si quantum wells because the ellipsoids of the lowest conduction valleys are oriented along the growth direction.
机译：我们从理论上证明，有可能设计基于SiGe的量子阱结构，其中通过垂直入射红外辐射诱发子带间跃迁。已采用sp（3）d（5）s *紧密结合模型来评估由[Si]合金隔开的一个纯Ge量子阱组成的，沿[001]生长的超晶格的最低传导受限态的电子态和光学跃迁。 ]方向。我们发现，通过质量张量的非对角线元素，在法向入射辐射下，Ge井中受限状态之间实现了显着的光学耦合。实际上，最小能量Ge传导谷相对于[001]生长轴倾斜。为了进行比较，我们表明，对于由Si量子阱组成的类似结构所限制的传导状态，无法实现这种耦合，因为最低传导谷的椭圆体沿生长方向取向。

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