Mobility asymmetry in InGaAs/InAlAs heterostructures with InAs quantum wires

Lin ZC; Hsieh WH; Lee CP; Suen YW

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Mobility asymmetry in InGaAs/InAlAs heterostructures with InAs quantum wires

机译：InAs量子线的InGaAs / InAlAs异质结构中的迁移不对称

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Strong asymmetry of electron mobility in InGaAs/InAlAs heterostructures (lattice matched to InP) with the presence of InAs quantum wires was observed. Self-assembled InAs quantum wires, embedded in an InGaAs matrix close to the hetero-interface, has a strong effect in electron conduction in the interface channel. The low temperature mobility for electrons moving parallel to the quantum wires is much higher than that of electrons moving perpendicular to the wires. The asymmetry in mobility is attributed to the difference in scattering cross section of the quantum wires in these two directions.

机译：在InAs量子线的存在下，观察到InGaAs / InAlAs异质结构（晶格与InP匹配）中电子迁移率的强不对称性。嵌入异质界面附近的InGaAs矩阵中的自组装InAs量子线对界面通道中的电子传导有很强的影响。平行于量子线运动的电子的低温迁移率远高于垂直于量子线运动的电子的低温迁移率。迁移率的不对称归因于量子线在这两个方向上的散射截面的差异。

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《Nanotechnology》 |2007年第7期|共3页
作者
Lin ZC; Hsieh WH; Lee CP; Suen YW;
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原文格式 PDF
正文语种 eng
中图分类一般工业技术;
关键词
GROWTH; EPITAXY; INP;

机译：增长;表象;输入;

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专利

1. Optical transition and carrier relaxation in self-assembled InAs/GaAs quantum dots with InAlAs and InGaAs combination cap layer by resonant excitation [J] . 边历峰, 金朝上海大学学报：英文版 . 2010,第002期
2. Optical transition and carrier relaxation in self-assembled InAs/GaAs quantum dots with InAlAs and InGaAs combination cap layer by resonant excitation [J] . BIAN Li-feng, JIN Zhao 上海大学学报（英文版） . 2010,第002期
3. Mobility asymmetry in InGaAs/InAlAs heterostructures with InAs quantum wires [J] . Lin ZC, Hsieh WH, Lee CP, Nanotechnology . 2007,第7期

机译：InAs量子线的InGaAs / InAlAs异质结构中的迁移不对称
4. Effect of Strongly Mismatched GaAs and InAs Inserts in a InAlAs Buffer Layer on the Structural and Optical Properties of Metamorphic InAs(Sb)/InGaAs/InAlAs/GaAs Quantum-Confined Heterostructures [J] . Solovev V. A., Chernov M. Yu, Komkov O. S., JETP Letters . 2019,第6期

机译：强烈不匹配的GaAs和InAs在Inalas缓冲层中的影响在变质InAs（Sb）/ InGaAs / Inalas / GaAs量子限制异质结构的结构和光学性质上
5. Structural and electrical properties of InAlAs/InGaAs/InAlAs HEMT heterostructures on InP substrates with InAs inserts in quantum well (vol 59, pg 900, 2014) [J] . Galiev G. B., Vasiliev A. L., Imamov R. M., Crystallography reports . 2015,第3期

机译：在量子阱中具有InAs插入物的InP衬底上的InAlAs / InGaAs / InAlAs HEMT异质结构的结构和电性能（第59卷，第900页，2014）
6. Anti-Weak-Localization Study of Rashba Spin-Splitting Energy as a Function of Well Asymmetry in InAlAs/InGaAs/InAlAs Quantum Wells [C] . Takaaki Koga, Junsaku Nitta, Tatsushi Akazaki, Spintronics . 2002

机译：InAlAs / InGaAs / InAlAs量子阱中Rashba自旋分裂能量与阱不对称性的反弱定位研究
7. InGaAs/InAlAs quantum wells for 1.3 micron electro-absorption modulators on GaAs substrates. [D] . Shen, Lei. 1997

机译：GaAs衬底上用于1.3微米电吸收调制器的InGaAs / InAlAs量子阱。
8. Bipolar Effects in Photovoltage of Metamorphic InAs/InGaAs/GaAs Quantum Dot Heterostructures: Characterization and Design Solutions for Light-Sensitive Devices [O] . Sergii Golovynskyi, Luca Seravalli, Oleksandr Datsenko, 2017

机译：变质InAs / InGaAs / GaAs量子点异质结构光电压中的双极效应：光敏器件的表征和设计解决方案
9. Erratum to: “Structural and electrical properties of InAlAs/InGaAs/InAlAs HEMT heterostructures on InP substrates with InAs inserts in quantum well” [O] . G. B. Galiev, A. L. Vasiliev, R. M. Imamov, 2015

机译：错误到：“InP衬底上的Inalas / InGaAs / Inalas HEMT异质结构的结构和电性能与inaS阱插入量”
10. Quantum Transport: Silicon Inversion Layers and InAlAs-InGaAs Heterostructures [R] . Vasileska, D., Eldridge, T., Terry, D. K. 1996

机译：量子输运：硅反转层和Inalas-InGaas异质结构

Mobility asymmetry in InGaAs/InAlAs heterostructures with InAs quantum wires

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