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首页> 外文期刊>Nanotechnology >B-doping of vapour-liquid-solid grown Au-catalysed and Al-catalysed Si nanowires: effects of B_2H_6 gas during Si nanowire growth and B-doping by a post-synthesis in situ plasma process
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B-doping of vapour-liquid-solid grown Au-catalysed and Al-catalysed Si nanowires: effects of B_2H_6 gas during Si nanowire growth and B-doping by a post-synthesis in situ plasma process

机译：蒸气液固生长的金催化和铝催化的硅纳米线的B掺杂：Si纳米线生长过程中B_2H_6气体的影响以及后合成原位等离子体工艺对B掺杂的影响

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摘要

In this study, B-doping of vapour-liquid-solid (VLS) grown Si nanowires was studied. First, the different effects of B_2H_6 gas on nanowire structures during VLS growth of both Au-catalysed and Al-catalysed Si nanowires were investigated. While Au-catalysed Si nanowires grown with B_2H_6 gas reveal significant morphological changes, resulting in cone-shaped nanowires, structures comparable to un-doped nanowires were observed from Al-catalysed Si nanowires, which may be explained by thermodynamic properties of Au and Al catalyst in the presence of boron. In addition, successful incorporation of boron and controllability of its concentration in Si nanowires, maintaining the structural quality of the nanowires, was achieved by a post-synthesis in situ plasma B_2H_6 doping process.
机译：在这项研究中，研究了汽-液-固（VLS）生长的Si纳米线的B掺杂。首先，研究了B_2H_6气体对Au催化和Al催化的Si纳米线的VLS生长过程中纳米线结构的不同影响。虽然用B_2H_6气体生长的金催化的Si纳米线显示出​​显着的形态变化，从而形成锥形纳米线，但从Al催化的Si纳米线观察到的结构与未掺杂的纳米线相当，这可以用Au和Al催化剂的热力学性质来解释在硼的存在下。另外，通过后合成原位等离子体B_2H_6掺杂工艺实现了硼在Si纳米线中的成功掺入和其浓度的可控性，保持了纳米线的结构质量。

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