Arrays of Ge islands on Si(001) grown by means of electron-beam pre-patterning

M Borgstrom; V Zela; W Seifert

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Arrays of Ge islands on Si(001) grown by means of electron-beam pre-patterning

机译：通过电子束预构图在Si（001）上生长的Ge岛阵列

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We show that well-defined arrays of self-assembled Ge dots on Si(001) can be grown after pre-patterning the Si surface by means of an electron beam. The electron beam produces C-containing growth masks. The overgrowth of these masks with Si results in pits at the Si surface, in and around which Ge dots nucleate selectively. A manifold of different arrays can be obtained. Almost perfect arrays of quadruples of dots nucleate in the intersections of the four {11n} facets. This way of producing quantum dot arrays is very promising for producing dot structures suitable for use in the study of, for instance, dot-dot tunnelling and related effects.

机译：我们表明，在通过电子束对硅表面进行预构图后，可以在Si（001）上生长自定义的Ge点的定义明确的阵列。电子束产生含C的生长掩模。这些掩模中的Si过度生长会在Si表面产生凹坑，Ge点及其周围会选择性地成核。可以获得不同阵列的流形。在四个{11n}面的交点中，几乎四倍的点的完美阵列成核。产生量子点阵列的这种方式对于产生适合用于例如点-点隧穿和相关效应的研究的点结构是非常有前途的。

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《Nanotechnology》 |2003年第2期|共4页
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M Borgstrom; V Zela; W Seifert;
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正文语种 eng
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1. Arrays of Ge islands on Si(001) grown by means of electron-beam pre-patterning [J] . M Borgstrom, V Zela, W Seifert Nanotechnology . 2003,第2期

机译：通过电子束预构图在Si（001）上生长的Ge岛阵列
2. Geometry dependent nucleation mechanism for SiGe islands grown on pit-patterned Si(001) substrates [J] . Gang Chen, Herbert Lichtenberger, Friedrich Schaffler, Materials science & engineering. C, Biomimetic and supramolecular systems . 2006,第5a7期

机译：凹坑图案化Si（001）衬底上生长的SiGe岛的几何依赖性成核机理
3. Ge self-assembled islands grown on SiGe/Si(001) relaxed buffer layers [J] . M.V. Shaleev, A.V. Novikov, O.A. Kuznetsov, Materials Science and Engineering. B, Solid-State Materials for Advanced Technology . 2005,第Dec期

机译：在SiGe / Si（001）弛豫缓冲层上生长的Ge自组装岛
4. Composition and structure of Ge islands grown on Si(001) and of SiGe grown on Si mesa [C] . D.V. Regelman, V. Magidson, R. Beserman, Thin films epitaxial growth and nanostructures . 1998

机译：Si（001）上生长的Ge岛和Si mesa上生长的SiGe的组成和结构
5. Carbon incorporation pathways and lattice site distributions in silicon carbide/silicon(001) and germanium carbide/germanium(001) alloys grown by molecular beam epitaxy. [D] . Park, Se-Yang. 2001

机译：通过分子束外延生长的碳化硅/硅（001）和碳化锗/锗（001）合金中的碳结合途径和晶格位点分布。
6. Alloying and Strain Relaxation in SiGe Islands Grown on Pit-Patterned Si(001) Substrates Probed by Nanotomography [O] . F Pezzoli, T Merdzhanova, A Rastelli, 2009

机译：纳米断层扫描技术在坑式Si（001）衬底上生长的SiGe岛中的合金化和应变松弛
7. Photoluminescence of SiGe/Si(001) self-assembled islands grown on strained Si/sub 1-x/Ge/sub x/ layer [O] . D.N. Lobanov, A.V. Novikov, M.V. Shaleev, -1

机译：SiGe / Si（001）的光致发光在紧张Si / sub 1-x / ge / sub x /层上生长的自组装岛

Arrays of Ge islands on Si(001) grown by means of electron-beam pre-patterning

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