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Effect of the stacking period on the strain field in InAs/GaAs quantum dots

机译：堆积时间对InAs / GaAs量子点中应变场的影响

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摘要

A finite-element analysis was carried out to study the effect of the vertical stacking period on the strain field in stacked InAs quantum dots embedded in a GaAs matrix. A comparison between stacked and unstacked structures was established. The hydrostatic strain was reinforced slightly as stacking occurred and was roughly constant regardless of the studied stacking period. On the other hand, the biaxial, radial and vertical strain components were relieved with stacking and the relief was significantly enhanced with a decrease in the stacking period. The drastic changes in the strain field with the stacking period due to strain field interaction are associated with the modification of electronic states and photoluminescence properties.
机译：进行了有限元分析，以研究垂直堆叠周期对嵌入GaAs矩阵中的堆叠InAs量子点中应变场的影响。建立了堆叠和未堆叠结构之间的比较。静压应变随着堆垛的发生而略有增强，并且与研究的堆垛周期无关，其大致恒定。另一方面，通过堆叠减轻了双轴，径向和垂直应变分量，并且随着堆叠时间的减少，显着增强了该应力。应变场相互作用引起的应变场随堆放周期的急剧变化与电子态和光致发光性质的改变有关。

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