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首页> 外文期刊>Nanotechnology >Amplified spontaneous emission from ZnO in n-ZnO/ZnO nanodots-SiO_2 composite/p-AlGaN heterojunction light-emitting diodes
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Amplified spontaneous emission from ZnO in n-ZnO/ZnO nanodots-SiO_2 composite/p-AlGaN heterojunction light-emitting diodes

机译：n-ZnO / ZnO纳米点-SiO_2复合材料/ p-AlGaN异质结发光二极管中ZnO的放大自发发射

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摘要

This study demonstrates amplified spontaneous emission (ASE) of the ultraviolet (UV) electroluminescence (EL) from ZnO at λ __ 380 nm in the n-ZnO/ZnO nanodots-SiO_2 composite/p-Al_(0.12)Ga_(0.88)N heterojunction light-emitting diode. A SiO_2 layer embedded with ZnO nanodots was prepared on the p-type Al_(0.12)Ga_(0.88)N using spin-on coating of SiO_2 nanoparticles followed by atomic layer deposition (ALD) of ZnO. An n-type Al-doped ZnO layer was deposited upon the ZnO nanodots_SiO_2 composite layer also by the ALD technique. High-resolution transmission electron microscopy (HRTEM) reveals that the ZnO nanodots embedded in the SiO_2 matrix have diameters of 3-8 nm and the wurtzite crystal structure, which allows the transport of carriers through the thick ZnO nanodots_SiO_2 composite layer. The high quality of the n-ZnO layer was manifested by the well crystallized lattice image in the HRTEM picture and the low-threshold optically pumped stimulated emission. The low refractive index of the ZnO nanodots_SiO_2 composite layer results in the increase in the light extraction efficiency from n-ZnO and the internal optical feedback of UV EL into n-ZnO layer. Consequently, significant enhancement of the UV EL intensity and super-linear increase in the EL intensity, as well as the spectral narrowing, with injection current were observed owing to ASE in the n-ZnO layer.
机译：这项研究表明，在n-ZnO / ZnO纳米点-SiO_2复合材料/p-Al_(0.12)Ga_(0.88)N异质结中，ZnO在λ__ 380 nm处的紫外（UV）电致发光（EL）的放大自发发射（ASE）发光二极管。使用SiO_2纳米粒子的旋涂法在ZnO原子层上沉积（ALD），在p型Al_（0.12）Ga_（0.88）N上制备了嵌入ZnO纳米点的SiO_2层。同样通过ALD技术将n型Al掺杂的ZnO层沉积在ZnO纳米点_SiO_2复合层上。高分辨率透射电子显微镜（HRTEM）显示，嵌入SiO_2基质的ZnO纳米点的直径为3-8 nm，并且具有纤锌矿晶体结构，从而允许载流子穿过厚的ZnO纳米点_SiO_2复合层。 HRTEM图像中结晶良好的晶格图像和低阈值光泵浦激发发射体现了n-ZnO层的高质量。 ZnO纳米点_SiO_2复合层的低折射率导致n-ZnO的光提取效率提高，以及UV EL进入n-ZnO层的内部光反馈。结果，由于n-ZnO层中的ASE，观察到随着注入电流UV EL强度的显着增强和EL强度的超线性增加以及光谱变窄。

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