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首页> 外文期刊>Nanotechnology >High-mobility transparent thin-film transistors with an Sb-doped SnO_2 nanocrystal channel fabricated at room temperature
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High-mobility transparent thin-film transistors with an Sb-doped SnO_2 nanocrystal channel fabricated at room temperature

机译：在室温下制备具有Sb掺杂SnO_2纳米晶通道的高迁移率透明薄膜晶体管

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摘要

Transparent thin-film transistors with bottom-gate figure are fabricated by sputter deposition of an Sb-doped SnO_2 nanocrystal channel layer onto glass substrates at room temperature with plasma-enhanced chemical vapor deposition SiO_2 gate dielectrics and sputtering ITO electrodes. These devices exhibit high-performance n-type transistor characteristics operating in depletion mode with an ultrahigh field-effect mobility of 158 cm~2 V~(-1) s~(-1). The current on/off ratio and the subthreshold swing are found to be 3 × 10~4 and 0.2 V/decade, respectively. These achievements demonstrate that SnO_2-based nanocrystal thin-film transistors are promising for high-speed transparent and flexible electronics on temperature-sensitive substrates.
机译：通过在室温下利用等离子体增强化学气相沉积SiO_2栅极电介质和溅射ITO电极，将掺Sb的SnO_2纳米晶体沟道层溅射沉积到玻璃基板上，来制造具有底栅图形的透明薄膜晶体管。这些器件具有以耗尽模式工作的高性能n型晶体管特性，具有158 cm〜2 V〜（-1）s〜（-1）的超高场效应迁移率。电流开/关比和亚阈值摆幅分别为3×10〜4和0.2 V / decade。这些成就表明，基于SnO_2的纳米晶体薄膜晶体管有望用于对温度敏感的基板上的高速透明和柔性电子产品。

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