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In situ TEM study of grain growth in nanocrystalline copper thin films

机译:纳米铜薄膜中晶粒长大的原位TEM研究

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Nanocrystalline metals demonstrate a range of fascinating properties, including high levels of mechanical strength. However, as these materials are exposed to high temperatures, it is critical to determine the grain size evolution, as this process can drastically hange the mechanical properties. In this work, nanocrystalline sputtered Cu thin films with 43 ± 2 nm grain size were produced by dc-magnetron sputtering. Specimens were subsequently annealed in situ in a transmission electron microscope at 100, 300 and 500 C. Not only was grain growth more evident at 500C but also the fraction of twins found. An analysis of grain growth kinetics revealed a time exponent of 3 and activation energy of 35 kJ mol1. This value is explained by the high energy stored in the form of dislocation, grain boundaries and twin boundaries existing in nanocrystalline copper, as well as the high probability for atoms to move across grains in nanocrystalline materials.
机译:纳米晶金属表现出一系列引人入胜的特性,包括高水平的机械强度。但是,由于这些材料暴露在高温下,因此确定晶粒尺寸的演变至关重要,因为此过程会大大降低机械性能。在这项工作中,通过直流磁控溅射制备了纳米晶溅射的Cu薄膜,其晶粒尺寸为43±2 nm。随后将样品在透射电子显微镜中于100、300和500°C进行原位退火。不仅在500°C下晶粒生长更加明显,而且还发现了孪晶的分数。晶粒生长动力学分析表明时间指数为3,活化能为35 kJ mol1。可以通过位错,纳米晶铜中存在的位错,晶界和孪晶界形式存储的高能量,以及原子在纳米晶材料中穿过晶粒移动的高可能性来解释该值。

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