Understanding the 3D structure of GaAs <111> B nanowires

Lisa S Karlsson; Kimberly A Dick; Jakob B Wagner

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Understanding the 3D structure of GaAs <111> B nanowires

机译：了解GaAs <111> B纳米线的3D结构

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The effects of lamellar twinning in epitaxial particle-assisted GaAs<111>B nanowires are investigated in an extensive high resolution electron microscopy (HRTEM) study of the low index zones <100>, <110>, <111> and <112>. As these directions are non-parallel to the (111) twin planes we find that the twin segments exhibit two different zone axes as a consequence of twinning. In the first three cases the alternative zones were found to be <122>, <114> and <115>. These findings are supported by a comparison of experimental HRTEM images and multi-slice simulations along with fast Fourier transform mapping. From the appearance of non-overlapping regions we conclude that the nanowires are bound by {111} facets only. The twin formation and the development of the stable side facets are discussed.

机译：在广泛的高分辨率电子显微镜（HRTEM）研究中，研究了低折射率区<100>，<110>，<111>和<112>的层状孪晶在外延粒子辅助GaAs <111> B纳米线中的作用。由于这些方向与（111）孪晶面不平行，因此我们发现孪晶段显示出两个不同的区域轴。在前三种情况下，发现替代区域为<122>，<114>和<115>。通过对实验HRTEM图像和多层仿真以及快速傅里叶变换映射的比较，支持了这些发现。从非重叠区域的出现，我们得出结论，纳米线仅受{111}面约束。讨论了孪晶的形成和稳定侧面的发展。

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《Nanotechnology》 |2007年第48期|共10页
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Lisa S Karlsson; Kimberly A Dick; Jakob B Wagner;
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1. Understanding the 3D structure of GaAs <111> B nanowires [J] . Lisa S Karlsson, Kimberly A Dick, Jakob B Wagner Nanotechnology . 2007,第48期

机译：了解GaAs <111> B纳米线的3D结构
2. Role of the Au/GaAs(111) interface on the wurtzite-structure formation during GaAs nanowire growth by a vapor-liquid-solid mechanism [J] . Toru Akiyama, Yuya Haneda, Kohji Nakamura, Physical review . 2009,第15期

机译：Au / GaAs（111）界面通过气液固机理在GaAs纳米线生长过程中纤锌矿结构形成中的作用
3. Theoretical understanding of the catalyst-free growth mechanism of GaAs < 111 > B nanowires [J] . Yeu In Won, Han Gyuseung, Park Jaehong, Applied Surface Science . 2019,第Deca15期

机译：GaAs <111> B纳米线无催化剂生长机理的理论理解
4. Evolution of cross-sectional structures during selective MBE growth of InGaAs hexagonal nanowire networks on InP 001 and (111)B substrates [C] . Fukushi T., Muranaka T., Kimura T., Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on . 2004

机译：InP 001和（111）B衬底上InGaAs六角形纳米线网络的选择性MBE生长期间截面结构的演变
5. Development of Nanowire Structures on 2D and 3D Substrates for Pool Boiling Heat Transfer Enhancement. [D] . Yao, Zhonghua. 2013

机译：在2D和3D基板上开发纳米线结构以增强池沸腾传热。
6. Electrochemical nanostructuring of (111) oriented GaAs crystals: from porous structures to nanowires [O] . Elena I Monaico, Eduard V Monaico, Veaceslav V Ursaki, 2020

机译：（111）取向GaAs晶体的电化学纳米结构：从多孔结构到纳米线
7. Electrochemical nanostructuring of (111) oriented GaAs crystals: from porous structures to nanowires [O] . Elena I Monaico, Eduard V Monaico, Veaceslav V Ursaki, 2020

机译：（111）取向GaAs晶体的电化学纳米结构：从多孔结构到纳米线
8. AlGaAs/GaAs(111) Heterostructures Grown by Molecular Beam Epitaxy [R] . Vina, L., Wang, W. I. 1986

机译：分子束外延生长alGaas / Gaas（111）异质结构

Understanding the 3D structure of GaAs <111> B nanowires

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