Nanoscale metal-oxide-semiconductor field-effect transistors: scaling limits and opportunities

Chen Q; Meindl JD

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Nanoscale metal-oxide-semiconductor field-effect transistors: scaling limits and opportunities

机译：纳米级金属氧化物半导体场效应晶体管：规模限制和机遇

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Compact, physics-based, short-channel models of subthreshold swing and threshold voltage are presented for undoped symmetric double-gate (DG) MOSFETs, including quantum-mechanical and fringe-induced-barrier-lowering effects. Scaling limit projections indicate that individual DG MOSFETs with good turn-off behaviour are feasible at 10 nm scale; however, practical exploitation of these devices toward gigascale integrated systems requires development of novel technologies for significant improvement in process control.

机译：针对未掺杂的对称双栅（DG）MOSFET，提出了基于物理的紧凑型，基于物理的短通道亚阈值摆幅和阈值电压模型，其中包括量子机械效应和边缘感应势垒降低效应。标度极限预测表明，具有良好关断性能的单个DG MOSFET在10 nm规模上是可行的;但是，将这些设备实际用于千兆集成系统需要开发新颖的技术，以显着改善过程控制。

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《Nanotechnology》 |2004年第10期|共7页
作者
Chen Q; Meindl JD;
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正文语种 eng
中图分类一般工业技术;
关键词
DOUBLE-GATE MOSFETS; THRESHOLD VOLTAGE; MODEL; DIELECTRICS; THICKNESS;

机译：双栅极MOSFET;阈值电压;型号;介电;厚度;

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专利

1. Nanoscale metal-oxide-semiconductor field-effect transistors: scaling limits and opportunities [J] . Chen Q, Meindl JD Nanotechnology . 2004,第10期

机译：纳米级金属氧化物半导体场效应晶体管：规模限制和机遇
2. Electron holography analysis of a shallow junction for planar-bulk metal-oxide-semiconductor field-effect transistors approaching the scaling limit [J] . Nobuyuki lkarashi, Takeshi Ikezawa, Kazuya Uejima, Journal of Applied Physics . 2008,第11期

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3. Analog performance of the nanoscale double-gate metal-oxide-semiconductor field-effect-transistor near the ultimate scaling limits [J] . Jimenez D, Iniguez B, Sune J, Journal of Applied Physics . 2004,第9期

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4. Technology options for reducing contact resistances in nanoscale metal-oxide-semiconductor field-effect transistors [C] . Yeo Yee-Chia 2013 IEEE 5th International Nanoelectronics Conference. . 2013

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6. An Overview of High-k Oxides on Hydrogenated-Diamond for Metal-Oxide-Semiconductor Capacitors and Field-Effect Transistors [O] . Jiangwei Liu, Yasuo Koide 2018

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7. Single carrier trapping and de-trapping in scaled silicon complementary metal-oxide-semiconductor field-effect transistors at low temperatures [O] . Li, Zuo, Husain, Muhammad, Yoshimoto, Hiroyuki, 2017

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Nanoscale metal-oxide-semiconductor field-effect transistors: scaling limits and opportunities

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