Raman determination of uniformity of multilayer Si/Ge structures with Ge quantum dots

A B Talochkin; A G Cherkov

首页> 外文期刊>Nanotechnology >Raman determination of uniformity of multilayer Si/Ge structures with Ge quantum dots

【24h】

Raman determination of uniformity of multilayer Si/Ge structures with Ge quantum dots

机译：用锗量子点拉曼测定多层Si / Ge结构的均匀性

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

Spectra of Raman scattering by optical phonons of multilayer Si/Ge structures with Ge quantum dots (QDs) grown by means of low-temperature (T_s = 250 °C) molecular beam epitaxy are studied. Two types of Ge islands are observed: pseudomorphic to a Si matrix, and those in which the strains are relaxed non-uniformly. Application of polarization measurements allows us to separate the phonon lines corresponding to these two components of a QD array. A method for the quantitative estimation of the degree of uniformity of the QD array, determining the integrated electron-hole spectrum of the structure, is proposed.

机译：研究了通过低温（T_s = 250°C）分子束外延生长的具有Ge量子点（QDs）的多层Si / Ge结构的光子对拉曼散射的光谱。观察到两种类型的Ge岛：对Si矩阵是伪晶的，以及应变不均匀松弛的Ge岛。极化测量的应用使我们能够分离与QD阵列的这两个分量相对应的声子线。提出了一种定量估计量子点阵列均匀度，确定结构的电子空穴谱的方法。

著录项

来源
《Nanotechnology》 |2009年第34期|共5页
作者
A B Talochkin; A G Cherkov;
展开▼
作者单位

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类 710C0161;
关键词
structures with Ge quantum dots; optical; is proposed;

机译：具有Ge量子点的结构;光学;提出;

相似文献

外文文献
中文文献
专利

1. Raman determination of uniformity of multilayer Si/Ge structures with Ge quantum dots [J] . A B Talochkin, A G Cherkov Nanotechnology . 2009,第34期

机译：用锗量子点拉曼测定多层Si / Ge结构的均匀性
2. Raman scattering in crystal multilayer structures with quantum dots: Theoretical and experimental study [J] . A.M. Yaremko, rnV.M. Dzhagan, rnV.O. Yukhymchuk, Superlattices and microstructures . 2010,第1期

机译：具有量子点的晶体多层结构中的拉曼散射：理论和实验研究
3. Raman scattering in multilayer structures with CdTe quantum dots in ZnTe [J] . Vodopyanov LK., Vinogradov VS., Melnik NN., JETP Letters . 2003,第3期

机译：ZnTe中具有CdTe量子点的多层结构中的拉曼散射
4. POLARIZED RAMAN SPECTROSCOPY OF SINGLE LAYER AND MULTILAYER Ge/Si(001) QUANTUM DOT HETEROSTRUCTURES [C] . A. V. Baranov, T. S. Perova, S. Solosin, NATO Advanced Research Workshop on Frontiers of Multifunctional Integrated Nanosystems . 2004

机译：单层和多层GE / Si（001）量子点异质结构的偏振拉曼光谱
5. Cryogenic Measurement of Gate-defined Quantum Dots in Si/SiGe Heterostructures for Quantum Computation [D] . Knapp, Trevor J. 2018

机译：Si / SiGe异质结构中的栅极定义量子点的低温测量，用于量子计算
6. Enhanced photovoltaic property by forming p-i-n structures containing Si quantum dots/SiC multilayers [O] . Yunqing Cao, Peng Lu, Xiaowei Zhang, 2014

机译：通过形成包含Si量子点/ SiC多层膜的p-i-n结构来增强光伏性能
7. The Role of Interdiffusion and Spatial Confinement in the Formation of Resonant Raman Spectra of Ge/Si(100) Heterostructures with Quantum-Dot Arrays [O] . Kucherenko, I. V., Vinogradov, V. S., Mel'nik, N. N., 2010

机译：相互扩散和空间约束在形成中的作用具有量子点阵列的Ge / si（100）异质结构的共振拉曼光谱

Raman determination of uniformity of multilayer Si/Ge structures with Ge quantum dots

摘要

著录项

相似文献

相关主题

期刊订阅