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The formation of symmetric SiC bi-nanowires with a Y-shaped junction

机译：具有Y型结的对称SiC双纳米线的形成

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摘要

Transmission electron microscopy was used to investigate the formation mechanism of SiC bi-nanowires (BNW) with a Y-shaped junction. Different from the previously reported growth mechanisms, our study suggests that when two individual nanowires that are growing through the vapor-liquid-solid mechanism meet with a proper angle, they will merge and form a straight and symmetric BNW with its two side-branches maintaining their original crystallographic orientations and sharing the same crystallographic growth direction, which can be 〈110〉, 〈112〉 or 〈113〉, depending on the meeting angle between the two initial nanowires. According to our observations, a growth model of SiC BNWs with a Y-shaped junction was proposed. The radii and the microstructure of the BNWs are controlled to a certain extent by the meeting angle and the radii of the two SiC single NWs.
机译：用透射电子显微镜研究了Y型结的SiC双纳米线（BNW）的形成机理。与先前报道的生长机制不同，我们的研究表明，当通过气-液-固机制生长的两条单独的纳米线以适当的角度相遇时，它们将合并并形成直的且对称的BNW，其两个侧支保持它们的原始晶体学取向并共享相同的晶体学生长方向，取决于两个初始纳米线之间的会合角，它们可以是〈110〉，〈112〉或〈113〉。根据我们的观察，提出了具有Y形结的SiC BNW的生长模型。 BNW的半径和微观结构在一定程度上受到两个SiC单NW的会合角和半径的控制。

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