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首页> 外文期刊>Nanotechnology >Nanocolumn InGaN/GaN quantum-well crystals on flat and pillared Si substrates with nitrified Ga as a buffer layer
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Nanocolumn InGaN/GaN quantum-well crystals on flat and pillared Si substrates with nitrified Ga as a buffer layer

机译：在氮化硝化镓作为缓冲层的平面和柱状Si衬底上的纳米柱InGaN / GaN量子阱晶体

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摘要

Nanocolumn InGaN/GaN quantum-well crystals were deposited on pillared and flat Si substrates. A unique flower structure was synthesized on the Si pillars. Vertically aligned nanocolumn crystals were uniformly deposited on the flat Si substrate. Raman spectra measurement shows the crystals are fully relaxed. Photoluminescence measurement indicates much stronger photoluminescence excited from the flower structure than that from the crystals on the flat Si substrate. Reflectivity measurement demonstrates much lower reflectivity of the flower structure than that of the crystals on the flat substrate. Laser scanning confocal microscopy measurement indicates clear vertical photoluminescence distributions of the flower structure. Optical microscopy images show that there is a horizontal photoluminescence distribution on the pillared Si substrate and the quantum-well flower structure emits much brighter light than the crystals on the flat Si substrate. The flower structure improves the surface geometrical structure and enhances the extraction efficiency much more than the crystals on the flat Si substrate.
机译：纳米柱InGaN / GaN量子阱晶体沉积在柱状和平坦的Si衬底上。在硅柱上合成了独特的花结构。垂直取向的纳米柱晶体均匀地沉积在平坦的Si衬底上。拉曼光谱测量显示晶体完全松弛。光致发光测量表明，从花结构激发的光致发光比从平坦Si衬底上的晶体激发的光致发光要强得多。反射率测量表明，花朵结构的反射率比平坦基板上晶体的反射率低得多。激光扫描共聚焦显微镜测量表明花结构的垂直光致发光分布清晰。光学显微镜图像显示，在柱状硅基板上存在水平的光致发光分布，并且量子阱花结构发出的光比平面硅基板上的晶体要亮得多。花形结构改善了表面几何结构，并比平坦的Si衬底上的晶体提高了提取效率。

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