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Reactant-governing growth direction of indium nitride nanowires

机译:氮化铟纳米线的反应物生长方向

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Hexagonal wurtzite InN nanowires are grown via a vapor-liquid-solid (VLS) mechanism with an Au catalyst. Microstructure characterizations of a large number of nanowires demonstrate that the growth direction of InN nanowires is governed by variable NH_3 flux. InN nanowires at a NH_3 flux of 10 standard cubic centimeters per minute (sccm) grow preferentially in a hexagonal close-packed (hcp) 〈?1001〉 direction, while those at 100sccm NH_3 flux favor the hcp 〈0001〉 direction. A free energy minimization model is proposed to interpret this phenomenon. The first-principles calculations reveal that the 〈 10?10〉 oriented nucleus has the lowest energy at the lower NH_3 flux. In contrast, when NH_3 flux is high, the 〈0001〉 oriented nucleus has the lowest energy.
机译:六方纤锌矿InN纳米线是通过金-气催化剂通过汽-液-固(VLS)机理生长的。大量纳米线的微观结构表征表明,InN纳米线的生长方向受可变的NH_3通量控制。 NH_3通量为10标准立方厘米每分钟(sccm)的InN纳米线优先沿密排六方(hcp)<?1001>方向生长,而NH_3通量为100sccm的InN纳米线则倾向于hcp <0001>方向。提出了一种自由能最小化模型来解释这种现象。第一性原理计算表明,在较低的NH_3通量下,〈10→10〉取向的核具有最低的能量。相反,当NH_3通量高时,〈0001〉取向的核具有最低的能量。

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