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首页> 外文期刊>Nanotechnology >Ultrahigh field emission current density from nitrogen-implanted ZnO nanowires
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Ultrahigh field emission current density from nitrogen-implanted ZnO nanowires

机译：氮注入ZnO纳米线的超高场发射电流密度

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摘要

An ultrahigh field emission current density of 10.3 mA cm(-2) was obtained from nitrogen-implanted ZnO nanowires. The sample was characterized and clearly showed a nitrogen doping signal. Field emission properties of the ZnO nanowires were considerably improved after N-implantation with lower turn-on field and a much higher current density. Removal of an amorphous layer, the presence of nanoscale protuberances, and surface-related defects were found to be responsible for the significantly enhanced field emission. Our work is important for the possible applications of ZnO nanowires in flat panel displays and high brightness electron sources.
机译：从注入氮的ZnO纳米线获得了10.3 mA cm（-2）的超高场发射电流密度。表征样品并清楚地显示出氮掺杂信号。氮注入后，ZnO纳米线的场发射特性得到了显着改善，导通场更低，电流密度更高。发现非晶层的去除，纳米级突起的存在以及与表面相关的缺陷是造成场发射显着增强的原因。我们的工作对于ZnO纳米线在平板显示器和高亮度电子源中的可能应用非常重要。

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