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Monte Carlo simulation of focused helium ion beam induced deposition

机译:聚焦氦离子束诱导沉积的蒙特卡罗模拟

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摘要

The details of a Monte Carlo helium ion beam induced deposition simulation are introduced and initial results for reaction rate and mass transport limited growth regimes are presented. Reaction rate limited growth leads to fast vertical growth from incident primary ions and minimal lateral broadening, whereas mass transport limited growth has lower vertical growth velocity and exhibits broadening due to scattered ions and secondary electrons. The results are compared to recent experiments and previous electron beam induced deposition simulations.
机译:介绍了蒙特卡洛氦离子束诱导沉积模拟的细节,并给出了反应速率和传质受限的生长机制的初步结果。反应速率受限的生长导致入射的初级离子快速垂直生长,并且横向扩展最小,而质量传输受限的生长具有较低的垂直生长速度,并且由于散射离子和二次电子而展宽。将结果与最近的实验和先前的电子束诱导沉积模拟进行比较。

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