Fabrication of four-probe fine electrodes on an atomically smooth Si(100)-2 X 1-H surface

Masaaki Fujimori; Seiji Heike; Yasuhiko Terada

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Fabrication of four-probe fine electrodes on an atomically smooth Si(100)-2 X 1-H surface

机译：在原子光滑的Si（100）-2 X 1-H表面上制备四探针细电极

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Four-probe fine electrodes were fabricated on a Si(100)-2 X 1-H surface using conventional lithographic and scanning-probe nano-fabrication techniques followed by standard cleaning and hydrogenation processes of the surface. It was confirmed by scanning tunnelling microscopy that a Si(100)-2 X 1-H surface is formed in the area except for the fine electrodes. Tunnelling spectroscopy of the electrode surface and electrical conduction measurements of nanoscale wires were performed for evaluating the fabricated electrodes. The results showed that the fabricated fine electrodes are capable of measuring the electrical properties of nanoscale surface objects.

机译：使用常规的光刻和扫描探针纳米加工技术，在Si（100）-2 X 1-H表面上制备四探针精细电极，然后进行标准的表面清洁和氢化工艺。通过扫描隧道显微镜证实，在细电极以外的区域中形成了Si（100）-2 X 1-H表面。进行电极表面的隧道光谱和纳米级导线的导电测量，以评估所制造的电极。结果表明，所制备的精细电极能够测量纳米级表面物体的电性能。

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《Nanotechnology》 |2004年第6期|共4页
作者
Masaaki Fujimori; Seiji Heike; Yasuhiko Terada;
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机译：在原子光滑的Si（100）-2 X 1-H表面上制备四探针细电极
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Fabrication of four-probe fine electrodes on an atomically smooth Si(100)-2 X 1-H surface

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