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首页> 外文期刊>Nanotechnology >The nanostructure and electrical properties of SWNT bundle networks grown by an 'all-laser' growth process for nanoelectronic device applications
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The nanostructure and electrical properties of SWNT bundle networks grown by an 'all-laser' growth process for nanoelectronic device applications

机译：通过“全激光”生长工艺为纳米电子器件应用生长的SWNT束网络的纳米结构和电性能

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We report on an 'all-laser' synthesis approach that permits the control of the lateral growth of single wall nanotubes (SWNTs) on SiO_2/Si substrates at selected locations where nanoparticles catalysts were first deposited. This novel two-step growth process uses the same UV laser (KrF excimer; lambda = 248 nm) to deposit, in a first step, the CoNi nanoparticle catalysts on patterned SiO_2/Si substrates and, in a subsequent step, to grow the SWNTs. Atomic force microscopy and micro-Raman spectroscopy revealed that the 'all-laser' process leads to the formation of horizontal random networks of SWNT bundles, that bridge two adjacent nanoparticle strips. The diameter of the SWNTs was found to be approx 1.1 nm, while that of the bundles is generally in the 10-15 nm range. The current (I)-voltage (V_(SD)) characteristics of the fabricated SWNT devices confirmed that the random networks of SWNT bundles exhibit a p-type field-effect transistor behaviour. Conductance (G)-gate voltage (V_G) curves not only demonstrated that transport through the bundle networks was dominated by positive carriers (holes) but also that the bundles consist of mixtures of semiconducting and metallic SWNTs. The extremely high efficiency of our 'all-laser' growth process in producing high-quality SWNTs together with its relative simplicity definitely open new prospects for the development and integration of novel architectures of nanodevices based on SWNT networks.
机译：我们报告了一种“全激光”合成方法，该方法允许在选定位置首次沉积纳米颗粒催化剂的SiO_2 / Si基底上控制单壁纳米管（SWNT）的横向生长。这种新颖的两步生长过程使用相同的UV激光（KrF准分子;λ= 248 nm）在第一步中将CoNi纳米颗粒催化剂沉积在图案化的SiO_2 / Si衬底上，然后在后续步骤中生长SWNT 。原子力显微镜和显微拉曼光谱表明，“全激光”过程导致形成SWNT束的水平随机网络，该网络将两个相邻的纳米粒子条桥接在一起。发现SWNT的直径约为1.1nm，而束的直径通常在10-15nm范围内。制成的SWNT器件的电流（I）-电压（V_（SD））特性证实，SWNT束的随机网络表现出p型场效应晶体管的行为。电导（G）-栅极电压（V_G）曲线不仅表明通过束网络的传输以正载流子（空穴）为主，而且束还包含半导体和金属SWNT的混合物。我们的“全激光”增长过程在生产高质量SWNT方面的极高效率及其相对简单性，无疑为开发和集成基于SWNT网络的纳米器件的新型架构打开了新的前景。

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