Acoustical plasma oscillations in photoexcited electron-hole plasma induced in GaAs layers embedded with InAs quantum dots

B H Bairamov; V A Voitenko

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Acoustical plasma oscillations in photoexcited electron-hole plasma induced in GaAs layers embedded with InAs quantum dots

机译：嵌入InAs量子点的GaAs层中在光激发电子空穴等离子体中引起的声等离子体振荡

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We present, to our knowledge, the first experimental evidence for the existence of acoustical plasma oscillations in photoexcited electron-hole plasma observed in resonant quasielastic electronic light scattering spectra in the near-infrared spectral range in a GaAs matrix embedded with self-assembled InAs quantum dots.

机译：据我们所知，我们提供了第一个实验证据，表明在嵌入自组装InAs量子的GaAs矩阵的近红外光谱范围内的共振准弹性电子光散射光谱中观察到的光激发电子空穴等离子体中存在声等离子体振荡点。

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《Nanotechnology》 |2000年第4期|共4页
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B H Bairamov; V A Voitenko;
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正文语种 eng
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1. Acoustical plasma oscillations in photoexcited electron-hole plasma induced in GaAs layers embedded with InAs quantum dots [J] . B H Bairamov, V A Voitenko Nanotechnology . 2000,第4期

机译：嵌入InAs量子点的GaAs层中在光激发电子空穴等离子体中引起的声等离子体振荡
2. Impact of capping layer type on emission of InAs quantum dots embedded in InGaAs/InxAlyGazAs/GaAs quantum wells [J] . Torchynska T.V., Casas Espinola J.L., Stintz A. Journal of Applied Physics . 2014,第1期

机译：覆盖层类型对嵌入InGaAs / InxAlyGazAs / GaAs量子阱中的InAs量子点发射的影响
3. Impact of capping layer type on emission of InAs quantum dots embedded in InGaAs/In_xAl_yGa_zAs/GaAs quantum wells [J] . T. V. Torchynska, J. L. Casas Espinola, A. Stintz Journal of Applied Physics . 2014,第1期

机译：覆盖层类型对嵌入InGaAs / In_xAl_yGa_zAs / GaAs量子阱中的InAs量子点发射的影响
4. Hopping conductivity and magnetic-field-induced quantum Hall ― insulator transition in InAs/GaAs quantum dot layers [C] . V. A. Kulbachinskii, R. A. Lunin, V. A. Rogozin, International Symposium on Nanostructures: Physics and Technology . 2003

机译：跳跃电导率和磁场诱导的量子霍尔 - 绝缘体在INAS / GaAs量子点层中过渡
5. A photoexcited three-component electron-hole plasma in type II gallium arsenide/aluminum arsenide quantum wells. [D] . Mackay, Janet Leslie Ross. 1991

机译：II型砷化镓/砷化铝量子阱中的光激发三组分电子空穴等离子体。
6. Long-wavelength room-temperature luminescence from InAs/GaAs quantum dots with an optimized GaAsSbN capping layer [O] . Antonio D Utrilla, Jose M Ulloa, Alvaro Guzman, 2014

机译：具有优化的GaAsSbN覆盖层的InAs / GaAs量子点的长波长室温发光
7. Quantum-dot-induced optical transition enhancement in InAs quantum-dot-embedded p-i-n GaAs solar cells [O] . Shang XJ, He JF, Li MF, 2011

机译：InAs量子点嵌入的p-i-n GaAs太阳能电池中的量子点诱导的光跃迁增强

Acoustical plasma oscillations in photoexcited electron-hole plasma induced in GaAs layers embedded with InAs quantum dots

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