Growth of low-density InAs/GaAs quantum dots on a substrate with an intentional temperature gradient by molecular beam epitaxy

Peng Jin; X L Ye; Z G Wang

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Growth of low-density InAs/GaAs quantum dots on a substrate with an intentional temperature gradient by molecular beam epitaxy

机译：通过分子束外延在有意温度梯度的衬底上生长低密度InAs / GaAs量子点

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InAs was deposited by molecular beam epitaxy (MBE) on a GaAs substrate with an intentional temperature gradient from centre to edge. Two-dimensional (2D) to three-dimensional (3D) morphology evolution was found along the direction in which the substrate temperature was decreasing. Quantum dots (QDs) with density as low as approx 8 X 10~6 cm~(-2) were formed in some regions. We attribute the morphological evolution to the temperature-dependent desorption of deposited indium and the intermixing between deposited indium and gallium from the buffer.

机译：通过分子束外延（MBE）将InAs沉积在GaAs基板上，并从中心到边缘有故意的温度梯度。发现沿着基板温度下降的方向的二维（2D）至三维（3D）形态演变。在某些区域形成了密度低至约8 X 10〜6 cm〜（-2）的量子点（QD）。我们将形态学演化归因于沉积铟的温度依赖性解吸以及来自缓冲液的沉积铟和镓之间的混合。

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《Nanotechnology》 |2005年第12期|共4页
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Peng Jin; X L Ye; Z G Wang;
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1. Growth of low-density InAs/GaAs quantum dots on a substrate with an intentional temperature gradient by molecular beam epitaxy [J] . Peng Jin, X L Ye, Z G Wang Nanotechnology . 2005,第12期

机译：通过分子束外延在有意温度梯度的衬底上生长低密度InAs / GaAs量子点
2. Effects of in situ annealing of GaAs(100) substrates on the subsequent growth of InAs quantum dots by molecular beam epitaxy [J] . H Morales-Cortes, C Meja-Garca, V H Mendez-Garca, Nanotechnology . 2010,第13期

机译：GaAs（100）衬底原位退火对分子束外延生长InAs量子点的影响
3. Photoluminescence Properties of Self-Assembled InAs Quantum Dots Grown on (001) and (113)B GaAs Substrates by Molecular Beam Epitaxy under a Slow Growth Rate Condition [J] . Tomoya Takahashi, Takuya Mukai, Ken Morita, Japanese journal of applied physics . 2009,第4issue2期

机译：在慢速生长条件下分子束外延在（001）和（113）B GaAs衬底上生长的自组装InAs量子点的光致发光特性
4. Growth of self-assembled InAs quantum dots on Si exposed GaAs substrates by molecular beam epitaxy [C] . Saucedo-Zeni, N., Zamora-Peredo, . 2002

机译：通过分子束外延生长在Si暴露的GaAs衬底上自组装InAs量子点的生长
5. Alternating molecular beam epitaxy and characterization of InGaAs quantum dots and quantum dot lasers. [D] . Mirin, Richard Paul. 1996

机译：InGaAs量子点和量子点激光器的交替分子束外延和表征。
6. Self-assembled GaInNAs/GaAsN quantum dot lasers: solid source molecular beam epitaxy growth and high-temperature operation [O] . SF Yoon, CY Liu, ZZ Sun, 2006

机译：自组装GaInNAs / GaAsN量子点激光器：固体源分子束外延生长和高温操作
7. Growth of low-density InAs/GaAs quantum dots on a substrate with an intentional temperature gradient by molecular beam epitaxy [O] . Jin P, Ye XL, Wang ZG 2005

机译：通过分子束外延在有意温度梯度的衬底上生长低密度InAs / GaAs量子点

Growth of low-density InAs/GaAs quantum dots on a substrate with an intentional temperature gradient by molecular beam epitaxy

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