• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Nanotechnology >Making silicon hydrophobic: wettability control by two-lengthscale simultaneous patterning with femtosecond laser irradiation
【24h】

Making silicon hydrophobic: wettability control by two-lengthscale simultaneous patterning with femtosecond laser irradiation

机译：使硅具有疏水性：通过飞秒激光辐照的两长度同时图案化来控制润湿性

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

We report on the wettability properties of silicon surfaces, simultaneously structured on the micrometre-scale and the nanometre-scale by femtosecond (fs) laser irradiation to render silicon hydrophobic. By varying the laser fluence, it was possible to control the wetting properties of a silicon surface through a systematic and reproducible variation of the surface roughness. In particular, the silicon - water contact angle could be increased from 66 degrees to more than 130 degrees. Such behaviour is described by incomplete liquid penetration within the silicon features, still leaving partially trapped air inside. We also show how controllable design and tailoring of the surface microstructures by wettability gradients can drive the motion of the drop's centre of mass towards a desired direction ( even upwards).
机译：我们报告了硅表面的可湿性，同时通过飞秒（fs）激光辐照使硅具有疏水性，同时在微米级和纳米级上进行结构化。通过改变激光能量密度，可以通过系统且可重现的表面粗糙度变化来控制硅表面的润湿特性。特别是，硅与水的接触角可以从66度增加到130度以上。这种行为可以通过硅部件内部的不完全液体渗透来描述，但仍将部分捕获的空气留在内部。我们还展示了如何通过可湿性梯度对表面微结构进行可控的设计和裁缝，以驱动液滴质心朝所需方向（甚至向上）运动。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号