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High performance Ω-gated Ge nanowire MOSFET with quasi-metallic source/drain contacts

机译：具有准金属源极/漏极触点的高性能Ω门控Ge纳米线MOSFET

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摘要

Ge nanowires (NWs) about 2 μ m long and 35 nm in diameter are grown heteroepitaxially on Si(111) substrates in a hot wall low-pressure chemical vapor deposition (LP-CVD) system using Au as a catalyst and GeH_4 as precursor. Individual NWs are contacted to Cu pads via e-beam lithography, thermal evaporation and lift-off techniques. Self-aligned and atomically sharp quasi-metallic copper-germanide source/drain contacts are achieved by a thermal activated phase formation process. The Cu_3Ge segments emerge from the Cu contact pads through axial diffusion of Cu which was controlled in situ by SEM, thus the active channel length of the MOSFET is adjusted without any restrictions from a lithographic process. Finally the conductivity of the channel is enhanced by Ga~+ implantation leading to a high performance Ω-gated Ge-NW MOSFET with saturation currents of a few microamperes.
机译：在以Au为催化剂，GeH_4为前驱体的热壁低压化学气相沉积（LP-CVD）系统中，在Si（111）衬底上异质外延生长长约2μm，直径35 nm的Ge纳米线（NWs）。各个NW通过电子束光刻，热蒸发和剥离技术与Cu焊盘接触。通过热激活相形成过程可实现自对准且原子清晰的准金属锗锗铜源/漏触点。 Cu_3Ge片段通过Cu的轴向扩散而从Cu接触垫露出，Cu的轴向扩散由SEM原位控制，因此可以调节MOSFET的有源沟道长度而不受光刻工艺的任何限制。最后，通过Ga +注入增强了沟道的导电性，从而产生了具有几微安培饱和电流的高性能Ω门控Ge-NW MOSFET。

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