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Tailoring the crystal structure of individual silicon nanowires by polarized laser annealing

机译：通过偏振激光退火定制单个硅纳米线的晶体结构

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摘要

We study the effect of polarized laser annealing on the crystalline structure of individual crystalline-amorphous core-shell silicon nanowires (NWs) using Raman spectroscopy. The crystalline fraction of the annealed spot increases dramatically from 0 to 0.93 with increasing incident laser power. We observe Raman lineshape narrowing and frequency hardening upon laser annealing due to the growth of the crystalline core, which is confirmed by high resolution transmission electron microscopy (HRTEM). The anti-Stokes:Stokes Raman intensity ratio is used to determine the local heating temperature caused by the intense focused laser, which exhibits a strong polarization dependence in Si NWs. The most efficient annealing occurs when the laser polarization is aligned along the axis of the NWs, which results in an amorphous-crystalline interface less than 0.5 νm in length. This paper demonstrates a new approach to control the crystal structure of NWs on the sub-micron length scale
机译：我们使用拉曼光谱研究偏振激光退火对单个晶体-非晶核-壳硅纳米线（NWs）晶体结构的影响。随着入射激光功率的增加，退火点的结晶度从0急剧增加到0.93。我们观察到由于结晶核的生长，激光退火时拉曼线形变窄和频率硬化，这已通过高分辨率透射电子显微镜（HRTEM）进行了确认。 anti-Stokes：Stokes拉曼强度比用于确定由强聚焦激光引起的局部加热温度，该激光在Si NWs中表现出强烈的偏振依赖性。当激光偏振沿NWs的轴对齐时，会发生最有效的退火，这会导致非晶晶体界面的长度小于0.5μm。本文展示了一种在亚微米长度尺度上控制纳米线晶体结构的新方法

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