Room temperature observation of size dependent single electron tunneling in a sub-2nm size tunable Pt nanoparticle embedded metal-oxide-semiconductor structure

Yun M.; Ramalingam B.; Gangopadhyay S.

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Room temperature observation of size dependent single electron tunneling in a sub-2nm size tunable Pt nanoparticle embedded metal-oxide-semiconductor structure

机译：小于2nm尺寸的可调谐Pt纳米粒子嵌入的金属氧化物半导体结构中的尺寸依赖性单电子隧穿的室温观察

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In this paper we report size dependent single electron tunneling behavior at room temperature in a metal-oxide-semiconductor structure with uniformly sized Pt nanoparticles embedded in an Al_2O_3 dielectric. The sub-2nm size Pt nanoparticles sandwiched between the Al_2O _3 layers are deposited by a unique tilted target sputter deposition technique which produces metal nanoparticles as small as 0.5nm with narrow size distributions at room temperature. The charging behavior of these nanoparticles shows clear single electron tunneling peaks due to the Coulomb blockade effect. Moreover, the average single electron addition energy and height of the single electron tunneling current strongly depend on the size of the Pt nanoparticle. These controllable single electron tunneling behaviors suggest a new route for fabrication of single electron devices.

机译：在本文中，我们报告了室温下在尺寸均匀的Pt纳米颗粒嵌入Al_2O_3电介质的金属氧化物半导体结构中，尺寸依赖的单电子隧穿行为。通过独特的倾斜靶溅射沉积技术沉积夹在Al_2O_3层之间的亚2nm大小的Pt纳米颗粒，该技术可产生小到0.5nm的金属纳米颗粒，在室温下具有窄的尺寸分布。这些纳米粒子的充电行为由于库仑阻挡效应而显示出清晰的单电子隧穿峰。此外，平均单电子加成能量和单电子隧穿电流的高度强烈地取决于Pt纳米颗粒的尺寸。这些可控的单电子隧穿行为提出了制造单电子器件的新途径。

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《Nanotechnology》 |2011年第46期|共5页
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Yun M.; Ramalingam B.; Gangopadhyay S.;
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1. Room temperature observation of size dependent single electron tunneling in a sub-2nm size tunable Pt nanoparticle embedded metal-oxide-semiconductor structure [J] . Yun M., Ramalingam B., Gangopadhyay S. Nanotechnology . 2011,第46期

机译：小于2nm尺寸的可调谐Pt纳米粒子嵌入的金属氧化物半导体结构中的尺寸依赖性单电子隧穿的室温观察
2. Size-dependent work function and single electron memory behavior of pentacene non-volatile memory with embedded sub-nanometer platinum nanoparticles [J] . Haisheng Zheng, Yang Zhou, Shubhra Gangopadhyay Journal of Applied Physics . 2015,第2期

机译：具有嵌入式亚纳米铂纳米粒子的并五苯非易失性存储器的尺寸依赖性功函数和单电子存储行为
3. Size-dependent single electron tunneling effect in Au nanoparticles [J] . R. Negishi, T. Hasegawa, H. Tanaka, Surface Science . 2007,第18期

机译：Au纳米颗粒中尺寸依赖的单电子隧穿效应
4. Self-organized Pairs of Ge Double Quantum Dots with Tunable Sizes and Spacings Enable Room-Temperature Operation of Qubit and Single-Electron Devices [C] . Kang-Ping Peng, Ching-Lun Chen, Ying-Tsan Tang, International Electron Devices Meeting . 2019

机译：具有可调整大小和间距的自组织Ge双量子点对使Qubit和单电子器件能够在室温下工作
5. Characterization of metal-oxide-semiconductor structures at low temperatures using self-aligned and vertically coupled aluminum and silicon single-electron transistors [D] . Sun, Luyan 2008

机译：使用自对准和垂直耦合铝和硅单电子晶体管在低温下的金属氧化物半导体结构的表征
6. Publisher Correction: Symmetric and Asymmetric Magnetic Tunnel Junctions with Embedded Nanoparticles: Effects of Size Distribution and Temperature on Tunneling Magnetoresistance and Spin Transfer Torque [O] . Arthur Useinov, Hsiu-Hau Lin, Chih-Huang Lai -1

机译：出版商更正：嵌入纳米粒子的对称和不对称磁性隧道结：尺寸分布和温度对隧穿磁阻和自旋传递扭矩的影响
7. Evidence of an enhanced interband absorption in Au nanoparticles: Size-dependent electronic structure and optical properties [O] . Balamurugan B, Maruyama T 2005

机译：金纳米颗粒中带间吸收增强的证据：尺寸依赖的电子结构和光学性质

Room temperature observation of size dependent single electron tunneling in a sub-2nm size tunable Pt nanoparticle embedded metal-oxide-semiconductor structure

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