White emission by self-regulated growth of InGaN/GaN quantum wells on in situ self-organized faceted n-GaN islands

Fang Z.

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White emission by self-regulated growth of InGaN/GaN quantum wells on in situ self-organized faceted n-GaN islands

机译：在原位自组织的多面n-GaN岛上通过InGaN / GaN量子阱的自调节生长实现白光发射

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The in situ self-organization of three-dimensional n-GaN islands of distinct sidewall faceting was realized by initial low V/III ratio growth under high reactor pressure followed by variations of the V/III ratio and reactor pressure. The naturally formed faceted islands with top and sidewall facets of various specific polar angles may serve as an ideal template for self-regulated growth of the InGaN/GaN multiple quantum wells (MQWs), i.e.the growth behavior is specific polar angle dependent. Further, the growth behavior and luminescence properties of the InGaN/GaN MQWs on various facets of different specific polar angles are directly compared and discussed. Tetrachromatic white emissions (blue, cyan, green, and red) from single-chip phosphor-free InGaN/GaN MQWs are realized by color tuning through island shaping, shape variations, and self-regulated growth of the InGaN/GaN MQWs

机译：明显的侧壁刻面的三维n-GaN岛的原位自组织是通过在高反应堆压力下初始低的V / III比生长，然后改变V / III比和反应堆压力来实现的。具有各种特定极角的顶面和侧壁小面的天然形成的刻面岛可以用作InGaN / GaN多量子阱（MQW）自调节生长的理想模板，即生长行为取决于特定的极角。此外，直接比较和讨论了InGaN / GaN MQW在不同比极性角的各个面上的生长行为和发光特性。来自单芯片无磷InGaN / GaN MQW的四色白色发射光（蓝色，青色，绿色和红色）是通过对岛形，形状变化和InGaN / GaN MQW的自调节生长进行颜色调整来实现的

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《Nanotechnology》 |2011年第31期|共8页
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Fang Z.;
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1. White emission by self-regulated growth of InGaN/GaN quantum wells on in situ self-organized faceted n-GaN islands [J] . Fang Z. Nanotechnology . 2011,第31期

机译：在原位自组织的多面n-GaN岛上通过InGaN / GaN量子阱的自调节生长实现白光发射
2. InGaN/GaN quantum wells on self-organized faceted GaN islands: Growth and luminescence studies [J] . Z. L. Fang, Y. X. Lin, J. Y. Kang Applied Physics Letters . 2011,第6期

机译：自组织刻面GaN岛上的InGaN / GaN量子阱：生长和发光研究
3. Phosphor-free white emission from InGaN quantum wells grown on in situ formed submicron-scale multifaceted GaN stripes [J] . Shen Xiyang, Wu Zhengyuan, Li Jinchai, Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics . 2019,第期

机译：IngaN量子孔的无磷的白色排放在原位形成的亚微米级多方面GaN条纹
4. GROWTH AND CHARACTERIZATION OF P-INGAN/I-INGAN /N-GAN DOUBLE HETEROJUNCTION SOLAR CELLS ON PATTERN SAPPHIRE SUBSTRATES [C] . Wen-Yih Liao, Ray-Hua Horng, Mu-Tao Chu, European Photovoltaic Solar Energy Conference and Exhibition . 2011

机译：模式蓝宝石衬底上P-ingan / I-ingan / N-gan双异质结太阳能电池的生长和表征
5. Optical Studies of Polar InGaN/GaN Quantum Well Structures [D] . Blenkhorn, William. 2016

机译：极性InGaN / GaN量子阱结构的光学研究
6. Hydrogen Generation using non-polar coaxial InGaN/GaN Multiple Quantum Well Structure Formed on Hollow n-GaN Nanowires [O] . Ji-Hyeon Park, Arjun Mandal, San Kang, -1

机译：使用在空心n-GaN纳米线上形成的非极性同轴InGaN / GaN多量子阱结构产生氢
7. On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes [O] . Kyaw, Z., Zhang, Z. H., Liu, W., 2014

机译：关于InGaN / GaN发光二极管的n-GaN层中N-GaN / P-GaN / N-GaN / P-GaN / N-GaN内置结的影响
8. MBE Growth and Properties of GaN, InGaN and GaN/InGaN Quantum Well Structures for Laser Diode Applications [R] . Schetzina, J. F. 2001

机译：用于激光二极管应用的GaN，InGaN和GaN / InGaN量子阱结构的mBE生长和性质

White emission by self-regulated growth of InGaN/GaN quantum wells on in situ self-organized faceted n-GaN islands

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