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Selective growth of silica nanowires in silicon catalysed by Pt thin film

机译：铂薄膜催化硅中二氧化硅纳米线的选择性生长

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Selective growth of amorphous silica nanowires on a silicon wafer deposited with Pt thin film is reported. The mechanism of nanpwire growth has been established to follow the vapour liquid solid (VLS) model via the PtSi phase acting as the catalyst. Nanowires grow with diameters ranging from 50 to 500 nm. These bottom-up grown nanowires exhibit photoluminescence with a stable emission of blue light at 430 nm under excitation. The effect of varying the seed layer thickness (Pt film) from 2 to 100 nm has been studied. It is observed that, above 10 nm thickness, a continuous layer of Pt_2Si re-solidifies on the surface, inhibiting the growth of nanowires. The selectivity to the Pt thickness has been exploited to create regions of nanowires connected to conducting silicide (Pt_2Si) simultaneously in a single furnace treatment. This novel approach has opened the gateways for realizing hybrid interconnects in silicon for various nano-optical applications such as the localization of light, low-dimensional waveguides for functional microphotonics, scanning near-field microscopy, and nanoantennae.
机译：据报道，在沉积有Pt薄膜的硅晶片上非晶硅纳米线的选择性生长。已经建立了纳米线生长的机制，以通过PtSi相作为催化剂遵循气液固体（VLS）模型。纳米线的直径在50到500 nm之间。这些自下而上生长的纳米线在激发下表现出光致发光，并在430 nm处稳定发射蓝光。已经研究了将晶种层厚度（Pt膜）从2改变为100 nm的效果。观察到，厚度超过10 nm时，连续的Pt_2Si层在表面重新凝固，从而抑制了纳米线的生长。已开发出对Pt厚度的选择性，以在单炉处理中同时创建与导电硅化物（Pt_2Si）连接的纳米线区域。这种新颖的方法为在各种纳米光学应用（如光的定位），用于功能微光子的低维波导，扫描近场显微镜和纳米天线中实现硅中的混合互连打开了网关。

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