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Growth control of GaAs nanowires using pulsed laser deposition with arsenic over-pressure

机译：使用砷超压脉冲激光沉积控制GaAs纳米线的生长

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Using pulsed laser ablation with arsenic over-pressure, the growth conditions for GaAs nanowires have been systematically investigated. The single-crystal structure and geometry of the nanowires have been characterized for various growth conditions. Arsenic over-pressure with As_2 molecules was introduced into the system by thermal decomposition of polycrystalline GaAs to control the stoichiometry and shape of the nanowires during growth. GaAs nanowires exhibit a variety of geometries under varying arsenic over-pressures, which can be understood by different growth processes via a vapor-liquid-solid mechanism. Without As_2 over-pressure, branched growth of GaAs with uncontrollable size and geometry was observed due to the decomposition of GaAs nanowires, producing metallic Ga which serves as catalysts for the branched growth of GaAs on the nanowire surfaces. Under optimal As_2 over-pressure, single-crystal GaAs nanowires with uniform diameter, small diameter distribution, length over 20 mu m and thin surface oxide layer were obtained and used for I-V characterization.
机译：使用具有砷超压的脉冲激光烧蚀技术，已经系统地研究了GaAs纳米线的生长条件。纳米线的单晶结构和几何形状已针对各种生长条件进行了表征。通过多晶GaAs的热分解，将具有As_2分子的砷超压引入系统，以控制生长过程中纳米线的化学计量和形状。 GaAs纳米线在不断变化的砷超压下表现出多种几何形状，这可以通过汽-液-固机理通过不同的生长过程来理解。在没有As_2超压的情况下，由于GaAs纳米线的分解，观察到了尺寸和几何形状无法控制的GaAs分支生长，产生了金属Ga，该金属Ga用作纳米线表面GaAs分支生长的催化剂。在最佳的As_2超压下，获得了直径均匀，直径分布小，长度超过20μm且表面氧化物薄的单晶GaAs纳米线，并用于IV表征。

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