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Large current carbon nanotube emitter growth using nickel as a buffer layer

机译：使用镍作为缓冲层的大电流碳纳米管发射极生长

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摘要

A method is reported for the fabrication of vertically aligned carbon nanotube emitter arrays by microwave plasma chemical vapour deposition. The technique uses a catalyst structure in which Fe, Ni and Al, respectively, acted as the catalyst for carbon nanotube growth, a buffer layer and an isolated layer between the Fe and Ni layers. The nanotubes were suitable for large current field emission applications. SEM images showed that the length and the diameter of the CNTs were uniform. Accordingly the CNT emitter arrays presented excellent height uniformity. Furthermore, the adhesion of the CNTs to the substrate was stable, and the electrical conductance between the CNTs and the substrate was good enough to ensure the continual emission of plenty of electrons. A highly stable field emission current density of more than 2 A cm~(-2) with a total field emission current of 20 mA was obtained. These results indicate a fabrication route for greatly improving the field emission characteristics of CNT-based field emitter arrays.
机译：报道了一种通过微波等离子体化学气相沉积制造垂直取向的碳纳米管发射器阵列的方法。该技术使用其中Fe，Ni和Al分别充当​​碳纳米管生长的催化剂的催化剂结构，Fe和Ni层之间的缓冲层和隔离层。纳米管适用于大电流场发射应用。 SEM图像显示CNT的长度和直径是均匀的。因此，CNT发射器阵列表现出优异的高度均匀性。此外，CNT对基底的粘附是稳定的，并且CNT与基底之间的电导率足够好以确保连续发射大量电子。获得了超过2 A cm〜（-2）的高度稳定的场发射电流密度，总场发射电流为20 mA。这些结果表明了用于大大改善基于CNT的场发射器阵列的场发射特性的制造路线。

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