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首页> 外文期刊>Nanotechnology >The heat annealing effect on the performance of CdS/CdSe-sensitized TiO2 photoelectrodes in photochemical hydrogen generation
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The heat annealing effect on the performance of CdS/CdSe-sensitized TiO2 photoelectrodes in photochemical hydrogen generation

机译：热退火对光化学制氢中CdS / CdSe敏化的TiO2光电极性能的影响

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摘要

Heat treatment was utilized to anneal the semiconductor sensitizers (CdS, CdSe and CdS/CdSe) assembled on mesoporous TiO2 films to enhance the performance of the photoelectrodes in a process of photoelectrochemical hydrogen generation. Various annealing temperatures (150, 300 and 400 degrees C) were employed and the results show that appropriately elevating the temperature (to approx. 300 degrees C) can increase the crystallinity of the CdS and CdSe, improve the charge transport characteristic of a photoelectrode and, therefore, lead to a higher performance of the TiO2/CdS and TiO2/CdSe electrodes. However, an over-annealing temperature (400 degrees C) may cause serious oxidation and/or decomposition of the sensitizers which is unfavorable to the photoelectrode. For the co-sensitized electrode, counter-diffusion of CdS and CdSe happens at the CdS/CdSe interface when the TiO2/CdS/CdSe electrode was co-annealed at 300 degrees C, which significantly decreases the performance of the co-sensitized electrode. This problem was solved by annealing first a TiO2/CdS electrode at 300 degrees C, followed by CdSe assembly and a second annealing at 150 degrees C. This electrode appears to have better performance than the others.
机译：利用热处理对组装在中孔TiO2薄膜上的半导体敏化剂（CdS，CdSe和CdS / CdSe）进行退火，以增强光电化学产氢过程中光电极的性能。使用了各种退火温度（150、300和400摄氏度），结果表明，适当提高温度（至约300摄氏度）可以提高CdS和CdSe的结晶度，改善光电电极的电荷传输特性，并提高因此，导致了TiO2 / CdS和TiO2 / CdSe电极的更高性能。但是，过度退火温度（400℃）可能导致敏化剂的严重氧化和/或分解，这对光电极是不利的。对于共增感电极，当TiO2 / CdS / CdSe电极在300摄氏度下共退火时，CdS和CdSe会在CdS / CdSe界面发生反扩散，这会大大降低共增感电极的性能。通过首先在300摄氏度下对TiO2 / CdS电极进行退火，然后进行CdSe组装，然后在150摄氏度下进行第二次退火来解决此问题。该电极的性能似乎优于其他电极。

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